STRUCTURE OF ION IMPLANTED Al//xGa//1// minus //xAs/GaAs SUPERLATTICES.

B. C. De Cooman; S. H. Chen; C. B. Carter; J. Ralston; G. D. Wicks

STRUCTURE OF ION IMPLANTED Al//xGa//1// minus //xAs/GaAs SUPERLATTICES.

B. C. De Cooman
, S. H. Chen
, C. B. Carter
, J. Ralston
, G. D. Wicks

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Cross-sectional Transmission Electron Microscopy (XTEM) and Raman Spectroscopy were used to study the defect structure of annealed high dose ion-implanted Al//xGa//1// minus //xAs/GaAs (x equals 0. 3) superlattices. The results show clearly that the amount and depth of superlattice layer ion-beam mixing depends on the ion mass and fluence used during implantation. In superlattices that retain their structure after implantation and annealing the distribution of the defects is inhomogeneous: most defects are nucleated in the GaAs layer.

Original language	English
Title of host publication	Institute of Physics Conference Series
Pages	301-306
Number of pages	6
Edition	76
State	Published - Dec 1 1985
Externally published	Yes

Cite this

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title = "STRUCTURE OF ION IMPLANTED Al//xGa//1// minus //xAs/GaAs SUPERLATTICES.",

abstract = "Cross-sectional Transmission Electron Microscopy (XTEM) and Raman Spectroscopy were used to study the defect structure of annealed high dose ion-implanted Al//xGa//1// minus //xAs/GaAs (x equals 0. 3) superlattices. The results show clearly that the amount and depth of superlattice layer ion-beam mixing depends on the ion mass and fluence used during implantation. In superlattices that retain their structure after implantation and annealing the distribution of the defects is inhomogeneous: most defects are nucleated in the GaAs layer.",

author = "\{De Cooman\}, \{B. C.\} and Chen, \{S. H.\} and Carter, \{C. B.\} and J. Ralston and Wicks, \{G. D.\}",

year = "1985",

month = dec,

day = "1",

language = "English",

isbn = "0854981675",

pages = "301--306",

booktitle = "Institute of Physics Conference Series",

edition = "76",

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TY - GEN

T1 - STRUCTURE OF ION IMPLANTED Al//xGa//1// minus //xAs/GaAs SUPERLATTICES.

AU - De Cooman, B. C.

AU - Chen, S. H.

AU - Carter, C. B.

AU - Ralston, J.

AU - Wicks, G. D.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - Cross-sectional Transmission Electron Microscopy (XTEM) and Raman Spectroscopy were used to study the defect structure of annealed high dose ion-implanted Al//xGa//1// minus //xAs/GaAs (x equals 0. 3) superlattices. The results show clearly that the amount and depth of superlattice layer ion-beam mixing depends on the ion mass and fluence used during implantation. In superlattices that retain their structure after implantation and annealing the distribution of the defects is inhomogeneous: most defects are nucleated in the GaAs layer.

AB - Cross-sectional Transmission Electron Microscopy (XTEM) and Raman Spectroscopy were used to study the defect structure of annealed high dose ion-implanted Al//xGa//1// minus //xAs/GaAs (x equals 0. 3) superlattices. The results show clearly that the amount and depth of superlattice layer ion-beam mixing depends on the ion mass and fluence used during implantation. In superlattices that retain their structure after implantation and annealing the distribution of the defects is inhomogeneous: most defects are nucleated in the GaAs layer.

UR - https://www.scopus.com/pages/publications/0022211245

M3 - Conference contribution

SN - 0854981675

SP - 301

EP - 306

BT - Institute of Physics Conference Series

ER -

STRUCTURE OF ION IMPLANTED Al//xGa//1// minus //xAs/GaAs SUPERLATTICES.

Abstract

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