Study of the growth of TiO<inf>2</inf> on Al<inf>2</inf>O<inf>3</inf> by pulsed-laser ablation

Michael W. Bench; C. Barry Carter

Study of the growth of TiO<inf>2</inf> on Al<inf>2</inf>O<inf>3</inf> by pulsed-laser ablation

Michael W. Bench
, C. Barry Carter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Pulsed laser deposition was used to grow thin films of TiO2 on single-crystal substrates of (0001) and (11̄02) α-Al2O3, and (001) MgO. Depositions were performed by ablating a sintered TiO2 rutile target onto both bulk substrates and prethinned TEM specimens at nominal temperatures ranging from 500 °C to 950 °C and at 15-50 mtorr oxygen pressures.

Original language	English
Title of host publication	Proceedings - Annual Meeting, Microscopy Society of America
Pages	642-643
Number of pages	2
State	Published - Dec 1 1994
Externally published	Yes

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title = "Study of the growth of TiO2 on Al2O3 by pulsed-laser ablation",

abstract = "Pulsed laser deposition was used to grow thin films of TiO2 on single-crystal substrates of (0001) and (1{\=1}02) α-Al2O3, and (001) MgO. Depositions were performed by ablating a sintered TiO2 rutile target onto both bulk substrates and prethinned TEM specimens at nominal temperatures ranging from 500 °C to 950 °C and at 15-50 mtorr oxygen pressures.",

author = "Bench, \{Michael W.\} and Carter, \{C. Barry\}",

year = "1994",

month = dec,

day = "1",

language = "English",

pages = "642--643",

booktitle = "Proceedings - Annual Meeting, Microscopy Society of America",

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TY - GEN

T1 - Study of the growth of TiO2 on Al2O3 by pulsed-laser ablation

AU - Bench, Michael W.

AU - Carter, C. Barry

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Pulsed laser deposition was used to grow thin films of TiO2 on single-crystal substrates of (0001) and (11̄02) α-Al2O3, and (001) MgO. Depositions were performed by ablating a sintered TiO2 rutile target onto both bulk substrates and prethinned TEM specimens at nominal temperatures ranging from 500 °C to 950 °C and at 15-50 mtorr oxygen pressures.

AB - Pulsed laser deposition was used to grow thin films of TiO2 on single-crystal substrates of (0001) and (11̄02) α-Al2O3, and (001) MgO. Depositions were performed by ablating a sintered TiO2 rutile target onto both bulk substrates and prethinned TEM specimens at nominal temperatures ranging from 500 °C to 950 °C and at 15-50 mtorr oxygen pressures.

UR - https://www.scopus.com/pages/publications/0028754892

M3 - Conference contribution

SP - 642

EP - 643

BT - Proceedings - Annual Meeting, Microscopy Society of America

ER -

Study of the growth of TiO<inf>2</inf> on Al<inf>2</inf>O<inf>3</inf> by pulsed-laser ablation

Abstract

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Cite this