Study on boron depth profiles in boron-doped diamond films by broad resonance reaction 11B(P,α)8Be at E<inf>p</inf> = 660 keV

Changgeng Liao; Yongqiang Wang; Shengsheng Yang

doi:10.1016/S0168-9002(98)01032-8

Study on boron depth profiles in boron-doped diamond films by broad resonance reaction 11B(P,α)8Be at E<inf>p</inf> = 660 keV

Changgeng Liao
, Yongqiang Wang
, Shengsheng Yang

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The boron depth profiles in heavily, moderately and lightly boron-doped diamond films are studied by a strong but broad nuclear resonance reaction 11B(P,α)8Be at Ep = 660 keV. A convolution method was used to convert the measured α-spectra into corresponding boron depth profiles. To correlate the boron depth profiles with the structure and property of the boron-doped diamond films, some relevant performance characteristics of the films such as Raman shift and specific resistance are determined and discussed. Results indicate that the strong and broad nuclear resonance reaction 11B(p,α)8Be at Ep = 660 keV combining with the data convolution analysis method is valuable and successful in determining boron depth profiles in boron-doped diamond films. © 1999 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	863-867
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	422
Issue number	1-3
DOIs	https://doi.org/10.1016/S0168-9002(98)01032-8
State	Published - Dec 1 1999
Externally published	Yes

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10.1016/S0168-9002(98)01032-8

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Liao, C., Wang, Y., & Yang, S. (1999). Study on boron depth profiles in boron-doped diamond films by broad resonance reaction 11B(P,α)8Be at E<inf>p</inf> = 660 keV. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 422(1-3), 863-867. https://doi.org/10.1016/S0168-9002(98)01032-8

Liao, Changgeng ; Wang, Yongqiang ; Yang, Shengsheng. / Study on boron depth profiles in boron-doped diamond films by broad resonance reaction 11B(P,α)8Be at E<inf>p</inf> = 660 keV. In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1999 ; Vol. 422, No. 1-3. pp. 863-867.

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title = "Study on boron depth profiles in boron-doped diamond films by broad resonance reaction 11B(P,α)8Be at Ep = 660 keV",

abstract = "The boron depth profiles in heavily, moderately and lightly boron-doped diamond films are studied by a strong but broad nuclear resonance reaction 11B(P,α)8Be at Ep = 660 keV. A convolution method was used to convert the measured α-spectra into corresponding boron depth profiles. To correlate the boron depth profiles with the structure and property of the boron-doped diamond films, some relevant performance characteristics of the films such as Raman shift and specific resistance are determined and discussed. Results indicate that the strong and broad nuclear resonance reaction 11B(p,α)8Be at Ep = 660 keV combining with the data convolution analysis method is valuable and successful in determining boron depth profiles in boron-doped diamond films. {\textcopyright} 1999 Elsevier Science B.V. All rights reserved.",

author = "Changgeng Liao and Yongqiang Wang and Shengsheng Yang",

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doi = "10.1016/S0168-9002(98)01032-8",

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Liao, C, Wang, Y & Yang, S 1999, 'Study on boron depth profiles in boron-doped diamond films by broad resonance reaction 11B(P,α)8Be at E<inf>p</inf> = 660 keV', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 422, no. 1-3, pp. 863-867. https://doi.org/10.1016/S0168-9002(98)01032-8

Study on boron depth profiles in boron-doped diamond films by broad resonance reaction 11B(P,α)8Be at E<inf>p</inf> = 660 keV. / Liao, Changgeng; Wang, Yongqiang; Yang, Shengsheng.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 422, No. 1-3, 01.12.1999, p. 863-867.

Research output: Contribution to journal › Article › peer-review

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T1 - Study on boron depth profiles in boron-doped diamond films by broad resonance reaction 11B(P,α)8Be at Ep = 660 keV

AU - Liao, Changgeng

AU - Wang, Yongqiang

AU - Yang, Shengsheng

PY - 1999/12/1

Y1 - 1999/12/1

N2 - The boron depth profiles in heavily, moderately and lightly boron-doped diamond films are studied by a strong but broad nuclear resonance reaction 11B(P,α)8Be at Ep = 660 keV. A convolution method was used to convert the measured α-spectra into corresponding boron depth profiles. To correlate the boron depth profiles with the structure and property of the boron-doped diamond films, some relevant performance characteristics of the films such as Raman shift and specific resistance are determined and discussed. Results indicate that the strong and broad nuclear resonance reaction 11B(p,α)8Be at Ep = 660 keV combining with the data convolution analysis method is valuable and successful in determining boron depth profiles in boron-doped diamond films. © 1999 Elsevier Science B.V. All rights reserved.

AB - The boron depth profiles in heavily, moderately and lightly boron-doped diamond films are studied by a strong but broad nuclear resonance reaction 11B(P,α)8Be at Ep = 660 keV. A convolution method was used to convert the measured α-spectra into corresponding boron depth profiles. To correlate the boron depth profiles with the structure and property of the boron-doped diamond films, some relevant performance characteristics of the films such as Raman shift and specific resistance are determined and discussed. Results indicate that the strong and broad nuclear resonance reaction 11B(p,α)8Be at Ep = 660 keV combining with the data convolution analysis method is valuable and successful in determining boron depth profiles in boron-doped diamond films. © 1999 Elsevier Science B.V. All rights reserved.

UR - https://www.scopus.com/pages/publications/0038900134

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DO - 10.1016/S0168-9002(98)01032-8

M3 - Article

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VL - 422

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1-3

ER -

Study on boron depth profiles in boron-doped diamond films by broad resonance reaction <sup>11</sup>B(P,α)<sup>8</sup>Be at E<inf>p</inf> = 660 keV

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