Study on the hydrogen depth profiles in amorphous silicon films by elastic recoil detection

Liao Changgeng; Yongqiang Wang; Yang Shengsheng; Jiang Hui; Zheng Zhihao

doi:10.1016/0042-207X(93)90346-C

Study on the hydrogen depth profiles in amorphous silicon films by elastic recoil detection

Liao Changgeng
, Yongqiang Wang
, Yang Shengsheng
, Jiang Hui
, Zheng Zhihao

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The hydrogen depth profiles in a-Si:H/a-Si_1-xC_x: H(B) films prepared by rf glow discharge at substrate temperatures T_s = 150, 200, 250 and 300°C were determined by elastic recoil detection. The depth distribution shapes of hydrogen concentration in these films and some of the characteristics are presented.

Original language	English
Pages (from-to)	1193-1196
Number of pages	4
Journal	Vacuum
Volume	44
Issue number	11-12
DOIs	https://doi.org/10.1016/0042-207X(93)90346-C
State	Published - Jan 1 1993
Externally published	Yes

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@article{de21858cc57041bdbc4344dec5ffa1e5,

title = "Study on the hydrogen depth profiles in amorphous silicon films by elastic recoil detection",

abstract = "The hydrogen depth profiles in a-Si:H/a-Si1-xCx: H(B) films prepared by rf glow discharge at substrate temperatures Ts = 150, 200, 250 and 300°C were determined by elastic recoil detection. The depth distribution shapes of hydrogen concentration in these films and some of the characteristics are presented.",

author = "Liao Changgeng and Yongqiang Wang and Yang Shengsheng and Jiang Hui and Zheng Zhihao",

year = "1993",

month = jan,

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doi = "10.1016/0042-207X(93)90346-C",

language = "English",

volume = "44",

pages = "1193--1196",

journal = "Vacuum",

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publisher = "Elsevier Ltd.",

number = "11-12",

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T1 - Study on the hydrogen depth profiles in amorphous silicon films by elastic recoil detection

AU - Changgeng, Liao

AU - Wang, Yongqiang

AU - Shengsheng, Yang

AU - Hui, Jiang

AU - Zhihao, Zheng

PY - 1993/1/1

Y1 - 1993/1/1

N2 - The hydrogen depth profiles in a-Si:H/a-Si1-xCx: H(B) films prepared by rf glow discharge at substrate temperatures Ts = 150, 200, 250 and 300°C were determined by elastic recoil detection. The depth distribution shapes of hydrogen concentration in these films and some of the characteristics are presented.

AB - The hydrogen depth profiles in a-Si:H/a-Si1-xCx: H(B) films prepared by rf glow discharge at substrate temperatures Ts = 150, 200, 250 and 300°C were determined by elastic recoil detection. The depth distribution shapes of hydrogen concentration in these films and some of the characteristics are presented.

UR - https://www.scopus.com/pages/publications/0027697458

U2 - 10.1016/0042-207X(93)90346-C

DO - 10.1016/0042-207X(93)90346-C

M3 - Article

SN - 0042-207X

VL - 44

SP - 1193

EP - 1196

JO - Vacuum

JF - Vacuum

IS - 11-12

ER -

Study on the hydrogen depth profiles in amorphous silicon films by elastic recoil detection

Abstract

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