Sub-10 nm lateral spatial resolution in scanning capacitance microscopy achieved with solid platinum probes

Sub-10 nm lateral spatial resolution obtained in scanning capacitance microscopy (SCM) were discussed. To acquire routine sub-10 nm resolution, a solid Pt metal probe had been developed with a sub-10 nm tip radius. Sub-10nm resolution was demonstrated on the field-effect-transisitor (FET) device over the abrupt meeting between a silicon-on-insulator oxide layer and a neighbouring Si region. The results show that the epitaxial staircase structure was quantitatively profiled demonstrating the accuracy obtained in quantitative profiling with the tips.