Sulfurization of MoO<inf>3</inf>in the Chemical Vapor Deposition Synthesis of MoS<inf>2</inf>Enhanced by an H<inf>2</inf>S/H<inf>2</inf>Mixture

The typical layered transition metal dichalcogenide (TMDC) material, MoS2, is considered a promising candidate for the next-generation electronic device due to its exceptional physical and chemical properties. In chemical vapor deposition synthesis, the sulfurization of MoO3 powders is an essential reaction step in which the MoO3 reactants are converted into MoS2 products. Recent studies have suggested using an H2S/H2 mixture to reduce MoO3 powders in an effective way. However, reaction mechanisms associated with the sulfurization of MoO3 by the H2S/H2 mixture are yet to be fully understood. Here, we perform quantum molecular dynamics (QMD) simulations to investigate the sulfurization of MoO3 flakes using two different gaseous environments: pure H2S precursors and a H2S/H2 mixture. Our QMD results reveal that the H2S/H2 mixture could effectively reduce and sulfurize the MoO3 reactants through additional reactions of H2 and MoO3, thereby providing valuable input for experimental synthesis of higher-quality TMDC materials.