Surface Integrity of Diamond Turned (100)Ge

The resulting surface integrity of (100)Ge subjected to off-axis single point diamond turning was investigated. Feedrate was varied using 9 and 20 μm/rev at 10 μm nominal depth of cut. Surface topography was measured with coherence scanning interferometry and atomic force microscopy. The resulting near surface lattice disorder was investigated with channeling Rutherford Backscattering Spectrometry and Raman Spectroscopy. Measured near surface lattice disorder was quantified in terms of equivalent amorphous layer thickness and minimum channeling yield. A comparison of the resulting surface integrity was made with surfaces created by chemomechanical polishing and magnetorheological finishing.