Abstract
Silicon nitride has long been employed in the microfabrication of thermal sensors due to its favorable material properties and the ease with which it facilitates surface micromachining. While a variety of studies have utilized thin silicon nitride membranes for high sensitivity thermal measurements, limited reports exist on the physical characteristics of membranes and platforms in a thickness limit much less than 100 nm. Herein, we report on the development of low-stress, suspended silicon nitride platform devices that enable thermal characterization of membranes ranging from 120 nm to less than 10 nm in thickness, providing thermal conductivities as low as 1.1 W m-1 K-1 near room temperature. Applications of these platforms may enable appreciable enhancement in the performance of devices reliant upon environmental thermal isolation including bolometers, calorimeters, and gas sensors, among others. [2024-0003].
| Original language | English |
|---|---|
| Pages (from-to) | 419-426 |
| Number of pages | 8 |
| Journal | Journal of Microelectromechanical Systems |
| Volume | 33 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2024 |
| Externally published | Yes |
Keywords
- membranes
- Silicon nitride
- thermal conductivity
- thermal engineering
- thermal sensors
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