TEM observations of compositional variations in Al<inf>x</inf>Ga<inf>1-x</inf>As grown by OMVPE

K. H. Kuesters; B. C. de Cooman; J. R. Shealy; C. B. Carter

doi:10.1016/0022-0248(85)90357-4

TEM observations of compositional variations in Al<inf>x</inf>Ga<inf>1-x</inf>As grown by OMVPE

K. H. Kuesters
, B. C. de Cooman
, J. R. Shealy
, C. B. Carter

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

AlxGa1-xAs/GaAs quantum-well structures, grown by organometallic vapor phase epitaxy have been studied in cross-section using transmission electron microscopy. Compositional variations in the AlxGa1-xAs and the chemical abruptness of the heterojunction have been examined using structure factor contrast in dark-field images. The composition modulations are due to instabilities during the growth process rather than an intrinsic property of the ternay alloy AlxGa1-xAs. © 1985.

Original language	English
Pages (from-to)	514-518
Number of pages	5
Journal	Journal of Crystal Growth
Volume	71
Issue number	3
DOIs	https://doi.org/10.1016/0022-0248(85)90357-4
State	Published - Jan 1 1985
Externally published	Yes

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title = "TEM observations of compositional variations in AlxGa1-xAs grown by OMVPE",

abstract = "AlxGa1-xAs/GaAs quantum-well structures, grown by organometallic vapor phase epitaxy have been studied in cross-section using transmission electron microscopy. Compositional variations in the AlxGa1-xAs and the chemical abruptness of the heterojunction have been examined using structure factor contrast in dark-field images. The composition modulations are due to instabilities during the growth process rather than an intrinsic property of the ternay alloy AlxGa1-xAs. {\textcopyright} 1985.",

author = "Kuesters, \{K. H.\} and \{de Cooman\}, \{B. C.\} and Shealy, \{J. R.\} and Carter, \{C. B.\}",

year = "1985",

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doi = "10.1016/0022-0248(85)90357-4",

language = "English",

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T1 - TEM observations of compositional variations in AlxGa1-xAs grown by OMVPE

AU - Kuesters, K. H.

AU - de Cooman, B. C.

AU - Shealy, J. R.

AU - Carter, C. B.

PY - 1985/1/1

Y1 - 1985/1/1

N2 - AlxGa1-xAs/GaAs quantum-well structures, grown by organometallic vapor phase epitaxy have been studied in cross-section using transmission electron microscopy. Compositional variations in the AlxGa1-xAs and the chemical abruptness of the heterojunction have been examined using structure factor contrast in dark-field images. The composition modulations are due to instabilities during the growth process rather than an intrinsic property of the ternay alloy AlxGa1-xAs. © 1985.

AB - AlxGa1-xAs/GaAs quantum-well structures, grown by organometallic vapor phase epitaxy have been studied in cross-section using transmission electron microscopy. Compositional variations in the AlxGa1-xAs and the chemical abruptness of the heterojunction have been examined using structure factor contrast in dark-field images. The composition modulations are due to instabilities during the growth process rather than an intrinsic property of the ternay alloy AlxGa1-xAs. © 1985.

UR - https://www.scopus.com/pages/publications/45949127273

U2 - 10.1016/0022-0248(85)90357-4

DO - 10.1016/0022-0248(85)90357-4

M3 - Article

SN - 0022-0248

VL - 71

SP - 514

EP - 518

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

TEM observations of compositional variations in Al<inf>x</inf>Ga<inf>1-x</inf>As grown by OMVPE

Abstract

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