Temperature and distance dependence of plasmon enhanced InAs/InGaAs/GaAs dot-in-a-well near IR emission

Sharmin Haq; Sadhvikas Addamane; Ganesh Balakrishnan; Danhong Huang; Terefe G. Habteyes

doi:10.1109/OMN.2017.8051477

Temperature and distance dependence of plasmon enhanced InAs/InGaAs/GaAs dot-in-a-well near IR emission

Sharmin Haq
, Sadhvikas Addamane
, Ganesh Balakrishnan
, Danhong Huang
, Terefe G. Habteyes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Using gold nanorods (AuNRs) as plasmonic structures to couple the InAs QD emitter for enhancing carrier generation and photon emission, temperature dependent PL emission over a range of 10K to room temperature has been studied systematically by varying the GaAs thickness.

Original language	English
Title of host publication	International Conference on Optical MEMS and Nanophotonics
DOIs	https://doi.org/10.1109/OMN.2017.8051477
State	Published - Sep 26 2017
Externally published	Yes

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10.1109/OMN.2017.8051477

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@inproceedings{25d40f1efe044809a7cea58f73e04e37,

title = "Temperature and distance dependence of plasmon enhanced InAs/InGaAs/GaAs dot-in-a-well near IR emission",

abstract = "Using gold nanorods (AuNRs) as plasmonic structures to couple the InAs QD emitter for enhancing carrier generation and photon emission, temperature dependent PL emission over a range of 10K to room temperature has been studied systematically by varying the GaAs thickness.",

author = "Sharmin Haq and Sadhvikas Addamane and Ganesh Balakrishnan and Danhong Huang and Habteyes, \{Terefe G.\}",

year = "2017",

month = sep,

day = "26",

doi = "10.1109/OMN.2017.8051477",

language = "English",

isbn = "9781538607374",

booktitle = "International Conference on Optical MEMS and Nanophotonics",

}

TY - GEN

T1 - Temperature and distance dependence of plasmon enhanced InAs/InGaAs/GaAs dot-in-a-well near IR emission

AU - Haq, Sharmin

AU - Addamane, Sadhvikas

AU - Balakrishnan, Ganesh

AU - Huang, Danhong

AU - Habteyes, Terefe G.

PY - 2017/9/26

Y1 - 2017/9/26

N2 - Using gold nanorods (AuNRs) as plasmonic structures to couple the InAs QD emitter for enhancing carrier generation and photon emission, temperature dependent PL emission over a range of 10K to room temperature has been studied systematically by varying the GaAs thickness.

AB - Using gold nanorods (AuNRs) as plasmonic structures to couple the InAs QD emitter for enhancing carrier generation and photon emission, temperature dependent PL emission over a range of 10K to room temperature has been studied systematically by varying the GaAs thickness.

UR - https://www.scopus.com/pages/publications/85034989138

U2 - 10.1109/OMN.2017.8051477

DO - 10.1109/OMN.2017.8051477

M3 - Conference contribution

SN - 9781538607374

BT - International Conference on Optical MEMS and Nanophotonics

ER -

Temperature and distance dependence of plasmon enhanced InAs/InGaAs/GaAs dot-in-a-well near IR emission

Abstract

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