Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser

H. C. Schneider; A. J. Fischer; W. W. Chow; J. F. Klem

doi:10.1063/1.1374484

Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser

H. C. Schneider
, A. J. Fischer
, W. W. Chow
, J. F. Klem

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We present theoretical and experimental results for the temperature dependence of threshold current in an InGaAsN/GaAs vertical-cavity surface-emitting laser (VCSEL) operating at 1.3 μm under continuous-wave current injection. Using a microscopic many-body laser theory, good agreement with experimental data is obtained. The influence of radiative and nonradiative recombination processes on the threshold current-density is investigated theoretically. Also, comparison to a GaAs/AlGaAs VCSEL emitting at 850 nm is made. © 2001 American Institute of Physics.

Original language	English
Pages (from-to)	3391-3393
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	22
DOIs	https://doi.org/10.1063/1.1374484
State	Published - May 28 2001
Externally published	Yes

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10.1063/1.1374484

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title = "Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser",

abstract = "We present theoretical and experimental results for the temperature dependence of threshold current in an InGaAsN/GaAs vertical-cavity surface-emitting laser (VCSEL) operating at 1.3 μm under continuous-wave current injection. Using a microscopic many-body laser theory, good agreement with experimental data is obtained. The influence of radiative and nonradiative recombination processes on the threshold current-density is investigated theoretically. Also, comparison to a GaAs/AlGaAs VCSEL emitting at 850 nm is made. {\textcopyright} 2001 American Institute of Physics.",

author = "Schneider, \{H. C.\} and Fischer, \{A. J.\} and Chow, \{W. W.\} and Klem, \{J. F.\}",

year = "2001",

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journal = "Applied Physics Letters",

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T1 - Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser

AU - Schneider, H. C.

AU - Fischer, A. J.

AU - Chow, W. W.

AU - Klem, J. F.

PY - 2001/5/28

Y1 - 2001/5/28

N2 - We present theoretical and experimental results for the temperature dependence of threshold current in an InGaAsN/GaAs vertical-cavity surface-emitting laser (VCSEL) operating at 1.3 μm under continuous-wave current injection. Using a microscopic many-body laser theory, good agreement with experimental data is obtained. The influence of radiative and nonradiative recombination processes on the threshold current-density is investigated theoretically. Also, comparison to a GaAs/AlGaAs VCSEL emitting at 850 nm is made. © 2001 American Institute of Physics.

AB - We present theoretical and experimental results for the temperature dependence of threshold current in an InGaAsN/GaAs vertical-cavity surface-emitting laser (VCSEL) operating at 1.3 μm under continuous-wave current injection. Using a microscopic many-body laser theory, good agreement with experimental data is obtained. The influence of radiative and nonradiative recombination processes on the threshold current-density is investigated theoretically. Also, comparison to a GaAs/AlGaAs VCSEL emitting at 850 nm is made. © 2001 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/0035926809

U2 - 10.1063/1.1374484

DO - 10.1063/1.1374484

M3 - Article

SN - 0003-6951

VL - 78

SP - 3391

EP - 3393

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser

Abstract

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