Abstract
The temperature-dependent self-energies of the lowest three subbands in a Si(100) surface inversion layer are evaluated in the plasmon-pole approximation for the screened interaction. The magnitudes of the self-energies decrease with increasing temperature. For the excited subbands the self-energies show very similar dependence on temperature. At low concentration the quasiparticle energy differences are independent of temperature, but at higher concentrations these subband separations increase slightly with temperature. © 1978 The American Physical Society.
| Original language | English |
|---|---|
| Pages (from-to) | 5564-5566 |
| Number of pages | 3 |
| Journal | Physical Review B |
| Volume | 18 |
| Issue number | 10 |
| DOIs | |
| State | Published - Jan 1 1978 |
| Externally published | Yes |
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