TEMPERATURE DEPENDENCE OF THE SUBBAND ENERGIES IN SEMICONDUCTING SURFACE INVERSION LAYERS: EXCHANGE AND CORRELATION EFFECTS.

R. K. Kalia; S. DasSarma; M. Nakayama; J. J. Quinn

TEMPERATURE DEPENDENCE OF THE SUBBAND ENERGIES IN SEMICONDUCTING SURFACE INVERSION LAYERS: EXCHANGE AND CORRELATION EFFECTS.

R. K. Kalia
, S. DasSarma
, M. Nakayama
, J. J. Quinn

Los Alamos National Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The subband structure in a Si(100) surface inversion layer is obtained including exchange-correlation effects in plasmon-pole approximation. Although at low concentration the subband self-energies decrease with temperature, at high concentration the self-energies of excited subbands increase. The quasi particle energy separations change very slightly with temperature.

Original language	English
Title of host publication	Inst Phys Conf Ser
Pages	1247-1250
Number of pages	4
Edition	43
State	Published - Jan 1 1979

Cite this

@inproceedings{ddd47ec1491b40f9bdee02c3699b5b5a,

title = "TEMPERATURE DEPENDENCE OF THE SUBBAND ENERGIES IN SEMICONDUCTING SURFACE INVERSION LAYERS: EXCHANGE AND CORRELATION EFFECTS.",

abstract = "The subband structure in a Si(100) surface inversion layer is obtained including exchange-correlation effects in plasmon-pole approximation. Although at low concentration the subband self-energies decrease with temperature, at high concentration the self-energies of excited subbands increase. The quasi particle energy separations change very slightly with temperature.",

author = "Kalia, \{R. K.\} and S. DasSarma and M. Nakayama and Quinn, \{J. J.\}",

year = "1979",

month = jan,

day = "1",

language = "English",

pages = "1247--1250",

booktitle = "Inst Phys Conf Ser",

edition = "43",

}

TY - GEN

T1 - TEMPERATURE DEPENDENCE OF THE SUBBAND ENERGIES IN SEMICONDUCTING SURFACE INVERSION LAYERS: EXCHANGE AND CORRELATION EFFECTS.

AU - Kalia, R. K.

AU - DasSarma, S.

AU - Nakayama, M.

AU - Quinn, J. J.

PY - 1979/1/1

Y1 - 1979/1/1

N2 - The subband structure in a Si(100) surface inversion layer is obtained including exchange-correlation effects in plasmon-pole approximation. Although at low concentration the subband self-energies decrease with temperature, at high concentration the self-energies of excited subbands increase. The quasi particle energy separations change very slightly with temperature.

AB - The subband structure in a Si(100) surface inversion layer is obtained including exchange-correlation effects in plasmon-pole approximation. Although at low concentration the subband self-energies decrease with temperature, at high concentration the self-energies of excited subbands increase. The quasi particle energy separations change very slightly with temperature.

UR - https://www.scopus.com/pages/publications/0018320597

M3 - Conference contribution

SP - 1247

EP - 1250

BT - Inst Phys Conf Ser

ER -

TEMPERATURE DEPENDENCE OF THE SUBBAND ENERGIES IN SEMICONDUCTING SURFACE INVERSION LAYERS: EXCHANGE AND CORRELATION EFFECTS.

Abstract

Fingerprint

Cite this