Temperature dependence of threshold current in a 1.3 μm InGaAsN VCSEL: Theory and experiment

H. C. Schneider; A. J. Fischer; W. W. Chow; J. F. Klem; K. D. Choquette

Temperature dependence of threshold current in a 1.3 μm InGaAsN VCSEL: Theory and experiment

H. C. Schneider
, A. J. Fischer
, W. W. Chow
, J. F. Klem
, K. D. Choquette

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The temperature dependence of threshold current in a 1.3 μm InGaAsN vertical-cavity surface-emitting lasers (VCSEL) was analyzed to determine the senstivity of laser performance to temperature variations. A tunnel junction was introduced at an antinode of the optical cavity field to accomodate the unipolar mirrors composed to Si-doped quarter-wavelength layers. The mirror reflectivities and internal losses were considered to estimate the threshold gain of the modeled device. The analysis suggested that inclusion of macroscopic Coulomb scattering instead of phenomenological relaxation rate to compute gain spectra improved the predictive capability.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Pages	135-136
Number of pages	2
State	Published - Oct 8 2001
Externally published	Yes

Cite this

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title = "Temperature dependence of threshold current in a 1.3 μm InGaAsN VCSEL: Theory and experiment",

abstract = "The temperature dependence of threshold current in a 1.3 μm InGaAsN vertical-cavity surface-emitting lasers (VCSEL) was analyzed to determine the senstivity of laser performance to temperature variations. A tunnel junction was introduced at an antinode of the optical cavity field to accomodate the unipolar mirrors composed to Si-doped quarter-wavelength layers. The mirror reflectivities and internal losses were considered to estimate the threshold gain of the modeled device. The analysis suggested that inclusion of macroscopic Coulomb scattering instead of phenomenological relaxation rate to compute gain spectra improved the predictive capability.",

author = "Schneider, \{H. C.\} and Fischer, \{A. J.\} and Chow, \{W. W.\} and Klem, \{J. F.\} and Choquette, \{K. D.\}",

year = "2001",

month = oct,

day = "8",

language = "English",

pages = "135--136",

booktitle = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

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T1 - Temperature dependence of threshold current in a 1.3 μm InGaAsN VCSEL: Theory and experiment

AU - Schneider, H. C.

AU - Fischer, A. J.

AU - Chow, W. W.

AU - Klem, J. F.

AU - Choquette, K. D.

PY - 2001/10/8

Y1 - 2001/10/8

N2 - The temperature dependence of threshold current in a 1.3 μm InGaAsN vertical-cavity surface-emitting lasers (VCSEL) was analyzed to determine the senstivity of laser performance to temperature variations. A tunnel junction was introduced at an antinode of the optical cavity field to accomodate the unipolar mirrors composed to Si-doped quarter-wavelength layers. The mirror reflectivities and internal losses were considered to estimate the threshold gain of the modeled device. The analysis suggested that inclusion of macroscopic Coulomb scattering instead of phenomenological relaxation rate to compute gain spectra improved the predictive capability.

AB - The temperature dependence of threshold current in a 1.3 μm InGaAsN vertical-cavity surface-emitting lasers (VCSEL) was analyzed to determine the senstivity of laser performance to temperature variations. A tunnel junction was introduced at an antinode of the optical cavity field to accomodate the unipolar mirrors composed to Si-doped quarter-wavelength layers. The mirror reflectivities and internal losses were considered to estimate the threshold gain of the modeled device. The analysis suggested that inclusion of macroscopic Coulomb scattering instead of phenomenological relaxation rate to compute gain spectra improved the predictive capability.

UR - https://www.scopus.com/pages/publications/0034800781

M3 - Conference contribution

SP - 135

EP - 136

BT - Conference on Lasers and Electro-Optics Europe - Technical Digest

ER -

Temperature dependence of threshold current in a 1.3 μm InGaAsN VCSEL: Theory and experiment

Abstract

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