Terahertz microscopy of charge carriers in semiconductors

F. Buersgens; R. Kersting; Houtong Chen

doi:10.1063/1.2186743

Terahertz microscopy of charge carriers in semiconductors

F. Buersgens
, R. Kersting
, Houtong Chen

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

We report on the application of apertureless THz near-field microscopy for sensing charge carriers in semiconductors. This technique allows for contactless probing of electron concentrations on a micrometer scale. Experimental data and model calculations indicate that as few as about 5000 electrons can be detected in a GaAs structure.

Original language	English
Article number	112115
Journal	Applied Physics Letters
Volume	88
Issue number	11
DOIs	https://doi.org/10.1063/1.2186743
State	Published - Mar 30 2006
Externally published	Yes

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title = "Terahertz microscopy of charge carriers in semiconductors",

abstract = "We report on the application of apertureless THz near-field microscopy for sensing charge carriers in semiconductors. This technique allows for contactless probing of electron concentrations on a micrometer scale. Experimental data and model calculations indicate that as few as about 5000 electrons can be detected in a GaAs structure.",

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Terahertz microscopy of charge carriers in semiconductors

Abstract

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