Abstract
We demonstrate the use of low-temperature grown GaAs (LT-GaAs) metasurface as an ultrafast photoconductive switching element gated with 1550 nm laser pulses. The metasurface is designed to enhance a weak two-step photon absorption at 1550 nm, enabling THz pulse detection.
| Original language | English |
|---|---|
| Title of host publication | 2023 Conference on Lasers and Electro-Optics, CLEO 2023 |
| State | Published - Jan 1 2023 |
| Externally published | Yes |
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