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Terahertz Photoconductive Metasurface Detector with enhanced Two-Step Photon Absorption at 1550 nm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate the use of low-temperature grown GaAs (LT-GaAs) metasurface as an ultrafast photoconductive switching element gated with 1550 nm laser pulses. The metasurface is designed to enhance a weak two-step photon absorption at 1550 nm, enabling THz pulse detection.
Original languageEnglish
Title of host publication2023 Conference on Lasers and Electro-Optics, CLEO 2023
StatePublished - Jan 1 2023
Externally publishedYes

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