Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors

X. G. Peralta; S. J. Allen; M. C. Wanke; N. E. Harff; J. A. Simmons; M. P. Lilly; J. L. Reno; P. J. Burke; J. P. Eisenstein

doi:10.1063/1.1497433

Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors

X. G. Peralta
, S. J. Allen
, M. C. Wanke
, N. E. Harff
, J. A. Simmons
, M. P. Lilly
, J. L. Reno
, P. J. Burke
, J. P. Eisenstein

Research output: Contribution to journal › Article › peer-review

314 Scopus citations

Abstract

Double-quantum-well field-effect transistors with a grating gate exhibit a sharply resonant, voltage tuned terahertz photoconductivity. The voltage tuned resonance is determined by the plasma oscillations of the composite structure. The resonant photoconductivity requires a double-quantum well but the mechanism whereby plasma oscillations produce changes in device conductance is not understood. The phenomenon is potentially important for fast, tunable terahertz detectors. © 2002 American Institute of Physics.

Original language	English
Pages (from-to)	1627-1629
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	9
DOIs	https://doi.org/10.1063/1.1497433
State	Published - Aug 26 2002
Externally published	Yes

Access to Document

10.1063/1.1497433

Cite this

@article{07f08e63eafb4278900922c8e3c653f0,

title = "Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors",

abstract = "Double-quantum-well field-effect transistors with a grating gate exhibit a sharply resonant, voltage tuned terahertz photoconductivity. The voltage tuned resonance is determined by the plasma oscillations of the composite structure. The resonant photoconductivity requires a double-quantum well but the mechanism whereby plasma oscillations produce changes in device conductance is not understood. The phenomenon is potentially important for fast, tunable terahertz detectors. {\textcopyright} 2002 American Institute of Physics.",

author = "Peralta, \{X. G.\} and Allen, \{S. J.\} and Wanke, \{M. C.\} and Harff, \{N. E.\} and Simmons, \{J. A.\} and Lilly, \{M. P.\} and Reno, \{J. L.\} and Burke, \{P. J.\} and Eisenstein, \{J. P.\}",

year = "2002",

month = aug,

day = "26",

doi = "10.1063/1.1497433",

language = "English",

volume = "81",

pages = "1627--1629",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors

AU - Peralta, X. G.

AU - Allen, S. J.

AU - Wanke, M. C.

AU - Harff, N. E.

AU - Simmons, J. A.

AU - Lilly, M. P.

AU - Reno, J. L.

AU - Burke, P. J.

AU - Eisenstein, J. P.

PY - 2002/8/26

Y1 - 2002/8/26

N2 - Double-quantum-well field-effect transistors with a grating gate exhibit a sharply resonant, voltage tuned terahertz photoconductivity. The voltage tuned resonance is determined by the plasma oscillations of the composite structure. The resonant photoconductivity requires a double-quantum well but the mechanism whereby plasma oscillations produce changes in device conductance is not understood. The phenomenon is potentially important for fast, tunable terahertz detectors. © 2002 American Institute of Physics.

AB - Double-quantum-well field-effect transistors with a grating gate exhibit a sharply resonant, voltage tuned terahertz photoconductivity. The voltage tuned resonance is determined by the plasma oscillations of the composite structure. The resonant photoconductivity requires a double-quantum well but the mechanism whereby plasma oscillations produce changes in device conductance is not understood. The phenomenon is potentially important for fast, tunable terahertz detectors. © 2002 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/77958468328

U2 - 10.1063/1.1497433

DO - 10.1063/1.1497433

M3 - Article

SN - 0003-6951

VL - 81

SP - 1627

EP - 1629

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors

Abstract

Access to Document

Fingerprint

Cite this