Terahertz studies of carrier dynamics and dielectric response of n-type, freestanding epitaxial GaN

The carrier dynamics and dielectric responses of n-type, freestanding epitaxial GaN was studied. The frequency dependent electron dynamics, power absorption and optical dispersion were observed over the frequency range from 0.1 THz to 4.0 THz. The results showed that due to the strong absorption at this lower frequency range, the amplitude of the transmitted output pulse is more than 1 order of magnitude smaller than the reference input pulse.