Abstract
The concept of "equivalent" damage in electronics when comparing accelerator and fast neutron irradiation is a topic of much interest. Sandia National Laboratories has an ongoing effort to use accelerator facilities to simulate transient defect populations generated from displacement damage and ionization effects observed in electronics at fast burst neutron facilities. This paper examines the utility of two accelerator facilities that will be used to simulate neutron induced damage and ionization when performing transistor tests. Physics based modeling comparisons of the test results will also be presented.
| Original language | English |
|---|---|
| Title of host publication | International Topical Meeting on Nuclear Research Applications and Utilization of Accelerators |
| State | Published - Dec 1 2009 |
| Externally published | Yes |
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