The characterization of misfit dislocations at {100} heterojunctions in III-V compound semiconductors

Strain localization at near-lattice-mismatched (100) semiconductor heterojunctions results in the formation of dislocations due to plastic deformation of the epilayer at low temperatures. A geometric model for this deformation has been presented which predicts the main features of these dislocation arrays at the heterojunction. In a full analysis of these dislocations, both the dissociated nature of the dislocations and their α βcharacter must be taken into account. The model has been tested by analyzing the arrangement and character of dislocations present in (Ga,In)As/GaAs and (Ga, In)P/GaAs heterostructures. It is shown that the dislocations geometries differ significantly depending on whether the epilayer was in tension or compression during growth. © 1989.