The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces

M. J. Demkowicz; D. Bhattacharyya; I. Usov; Y. Q. Wang; M. Nastasi; A. Misra

doi:10.1063/1.3502594

The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces

M. J. Demkowicz
, D. Bhattacharyya
, I. Usov
, Y. Q. Wang
, M. Nastasi
, A. Misra

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

107 Scopus citations

Abstract

Atomistic modeling shows that Cu-Nb and Cu-V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼5 at. % and ∼0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at Cu-Nb interfaces than in Cu-V interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors.

Original language	English
Article number	161903
Journal	Applied Physics Letters
Volume	97
Issue number	16
DOIs	https://doi.org/10.1063/1.3502594
State	Published - Oct 18 2010

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abstract = "Atomistic modeling shows that Cu-Nb and Cu-V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼5 at. \% and ∼0.8 at. \%., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at Cu-Nb interfaces than in Cu-V interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors.",

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AU - Bhattacharyya, D.

AU - Usov, I.

AU - Wang, Y. Q.

AU - Nastasi, M.

AU - Misra, A.

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N2 - Atomistic modeling shows that Cu-Nb and Cu-V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼5 at. % and ∼0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at Cu-Nb interfaces than in Cu-V interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors.

AB - Atomistic modeling shows that Cu-Nb and Cu-V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼5 at. % and ∼0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at Cu-Nb interfaces than in Cu-V interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors.

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The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces

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