The Effects of Electron-Hole Coulomb Interaction in Semiconductor Lasers

Weng W. Chow; Stephan W. Koch; Murray Sargent

doi:10.1109/3.108100

The Effects of Electron-Hole Coulomb Interaction in Semiconductor Lasers

Weng W. Chow
, Stephan W. Koch
, Murray Sargent

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

This paper applies a recent many-body theory to investigate the corrections to semiconductor laser gain and carrier-induced refractive index. Our results show nonnegligible modifications to these quantities and demonstrate the importance of band-gap renormalization and Coulomb enhancement. The influence of the many-body Coulomb effects on filamentation effects in semiconductor lasers is investigated. © 1990 IEEE

Original language	English
Pages (from-to)	1052-1057
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	26
Issue number	6
DOIs	https://doi.org/10.1109/3.108100
State	Published - Jan 1 1990
Externally published	Yes

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title = "The Effects of Electron-Hole Coulomb Interaction in Semiconductor Lasers",

abstract = "This paper applies a recent many-body theory to investigate the corrections to semiconductor laser gain and carrier-induced refractive index. Our results show nonnegligible modifications to these quantities and demonstrate the importance of band-gap renormalization and Coulomb enhancement. The influence of the many-body Coulomb effects on filamentation effects in semiconductor lasers is investigated. {\textcopyright} 1990 IEEE",

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N2 - This paper applies a recent many-body theory to investigate the corrections to semiconductor laser gain and carrier-induced refractive index. Our results show nonnegligible modifications to these quantities and demonstrate the importance of band-gap renormalization and Coulomb enhancement. The influence of the many-body Coulomb effects on filamentation effects in semiconductor lasers is investigated. © 1990 IEEE

AB - This paper applies a recent many-body theory to investigate the corrections to semiconductor laser gain and carrier-induced refractive index. Our results show nonnegligible modifications to these quantities and demonstrate the importance of band-gap renormalization and Coulomb enhancement. The influence of the many-body Coulomb effects on filamentation effects in semiconductor lasers is investigated. © 1990 IEEE

UR - https://www.scopus.com/pages/publications/0025448364

U2 - 10.1109/3.108100

DO - 10.1109/3.108100

M3 - Article

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SP - 1052

EP - 1057

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 6

ER -

The Effects of Electron-Hole Coulomb Interaction in Semiconductor Lasers

Abstract

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