The electronic states of ITO–MoS<inf>2</inf>: Experiment and theory

Oscar A. López-Galán; Manuel Ramos; John Nogan; Alejandro Ávila-García; Torben Boll; Martin Heilmaier

doi:10.1557/s43579-021-00126-9

The electronic states of ITO–MoS<inf>2</inf>: Experiment and theory

Oscar A. López-Galán
, Manuel Ramos
, John Nogan
, Alejandro Ávila-García
, Torben Boll
, Martin Heilmaier

Research output: Contribution to journal › Letter › peer-review

8 Scopus citations

Abstract

We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS2) interface. Our results indicate ITO and MoS2 conform an n-type Schottky barrier of c.a. − 1.0 eV due to orbital interactions; formation of an ohmic contact is caused by semiconducting and metal behavior of ITO as a function of crystal plane orientation. ITO introduces energy levels around the Fermi level in all interface models in the Γ-Μ-Κ-Γ path. The resulted Van der Waals interface and the values of Schottky barrier height enhance electron carrier injection. Graphical abstract: [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	137-144
Number of pages	8
Journal	MRS Communications
Volume	12
Issue number	2
DOIs	https://doi.org/10.1557/s43579-021-00126-9
State	Published - Apr 1 2022
Externally published	Yes

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@article{1c8dfb1af7044681b88d7d0c28ac8774,

title = "The electronic states of ITO{\textendash}MoS2: Experiment and theory",

abstract = "We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO{\textendash}MoS2) interface. Our results indicate ITO and MoS2 conform an n-type Schottky barrier of c.a. − 1.0 eV due to orbital interactions; formation of an ohmic contact is caused by semiconducting and metal behavior of ITO as a function of crystal plane orientation. ITO introduces energy levels around the Fermi level in all interface models in the Γ-Μ-Κ-Γ path. The resulted Van der Waals interface and the values of Schottky barrier height enhance electron carrier injection. Graphical abstract: [Figure not available: see fulltext.]",

author = "L{\'o}pez-Gal{\'a}n, \{Oscar A.\} and Manuel Ramos and John Nogan and Alejandro {\'A}vila-Garc{\'i}a and Torben Boll and Martin Heilmaier",

year = "2022",

month = apr,

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doi = "10.1557/s43579-021-00126-9",

language = "English",

volume = "12",

pages = "137--144",

journal = "MRS Communications",

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TY - JOUR

T1 - The electronic states of ITO–MoS2: Experiment and theory

AU - López-Galán, Oscar A.

AU - Ramos, Manuel

AU - Nogan, John

AU - Ávila-García, Alejandro

AU - Boll, Torben

AU - Heilmaier, Martin

PY - 2022/4/1

Y1 - 2022/4/1

N2 - We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS2) interface. Our results indicate ITO and MoS2 conform an n-type Schottky barrier of c.a. − 1.0 eV due to orbital interactions; formation of an ohmic contact is caused by semiconducting and metal behavior of ITO as a function of crystal plane orientation. ITO introduces energy levels around the Fermi level in all interface models in the Γ-Μ-Κ-Γ path. The resulted Van der Waals interface and the values of Schottky barrier height enhance electron carrier injection. Graphical abstract: [Figure not available: see fulltext.]

AB - We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS2) interface. Our results indicate ITO and MoS2 conform an n-type Schottky barrier of c.a. − 1.0 eV due to orbital interactions; formation of an ohmic contact is caused by semiconducting and metal behavior of ITO as a function of crystal plane orientation. ITO introduces energy levels around the Fermi level in all interface models in the Γ-Μ-Κ-Γ path. The resulted Van der Waals interface and the values of Schottky barrier height enhance electron carrier injection. Graphical abstract: [Figure not available: see fulltext.]

UR - https://www.scopus.com/pages/publications/85121427556

U2 - 10.1557/s43579-021-00126-9

DO - 10.1557/s43579-021-00126-9

M3 - Letter

SN - 2159-6859

VL - 12

SP - 137

EP - 144

JO - MRS Communications

JF - MRS Communications

IS - 2

ER -

The electronic states of ITO–MoS<inf>2</inf>: Experiment and theory

Abstract

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