The Formation of Faulted Dipoles in Plastically Deformed GaAs

B. C. De Cooman; C. B. Carter

doi:10.1002/pssa.2211120105

The Formation of Faulted Dipoles in Plastically Deformed GaAs

B. C. De Cooman
, C. B. Carter

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The structure and relative abundance of faulted dipoles in plastically deformed GaAs are studied in the transmission electron microscope by means of diffraction contrast analysis and high‐resolution microscopy. All the observed faulted dipoles are vacancy in nature. In crystals deformed under a high stress, faulted dipoles are only observed in p‐type material. This observation is a result of the dependence of the velocity of screw dislocations on the nature of the doping. It is the motion of the screw dislocations which leads to the generation of the faulted dipoles. Copyright © 1989 WILEY‐VCH Verlag GmbH & Co. KGaA

Original language	English
Pages (from-to)	41-54
Number of pages	14
Journal	Physica Status Solidi (A) Applied Research
Volume	112
Issue number	1
DOIs	https://doi.org/10.1002/pssa.2211120105
State	Published - Jan 1 1989
Externally published	Yes

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title = "The Formation of Faulted Dipoles in Plastically Deformed GaAs",

abstract = "The structure and relative abundance of faulted dipoles in plastically deformed GaAs are studied in the transmission electron microscope by means of diffraction contrast analysis and high‐resolution microscopy. All the observed faulted dipoles are vacancy in nature. In crystals deformed under a high stress, faulted dipoles are only observed in p‐type material. This observation is a result of the dependence of the velocity of screw dislocations on the nature of the doping. It is the motion of the screw dislocations which leads to the generation of the faulted dipoles. Copyright {\textcopyright} 1989 WILEY‐VCH Verlag GmbH \& Co. KGaA",

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N2 - The structure and relative abundance of faulted dipoles in plastically deformed GaAs are studied in the transmission electron microscope by means of diffraction contrast analysis and high‐resolution microscopy. All the observed faulted dipoles are vacancy in nature. In crystals deformed under a high stress, faulted dipoles are only observed in p‐type material. This observation is a result of the dependence of the velocity of screw dislocations on the nature of the doping. It is the motion of the screw dislocations which leads to the generation of the faulted dipoles. Copyright © 1989 WILEY‐VCH Verlag GmbH & Co. KGaA

AB - The structure and relative abundance of faulted dipoles in plastically deformed GaAs are studied in the transmission electron microscope by means of diffraction contrast analysis and high‐resolution microscopy. All the observed faulted dipoles are vacancy in nature. In crystals deformed under a high stress, faulted dipoles are only observed in p‐type material. This observation is a result of the dependence of the velocity of screw dislocations on the nature of the doping. It is the motion of the screw dislocations which leads to the generation of the faulted dipoles. Copyright © 1989 WILEY‐VCH Verlag GmbH & Co. KGaA

UR - https://www.scopus.com/pages/publications/0024628847

U2 - 10.1002/pssa.2211120105

DO - 10.1002/pssa.2211120105

M3 - Article

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EP - 54

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

ER -

The Formation of Faulted Dipoles in Plastically Deformed GaAs

Abstract

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