The observation of electrical hysteric behavior in synthesized V 2O5 nanoplates by recrystallization

The anomalous electrical conductance for the V₂O₅ foam synthesized via a foaming process was measured. In the annealing process, the synthesized V₂O₅ foam is recrystallized with the increase of annealing temperature. The recrystallization procedure was characterized by using physical analysis tools such as thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and X-ray diffractometer. In the electrical analysis technique of current-voltage characteristics as a function of annealing temperature, an anomalous hysteric behavior appears at the annealing temperature of 400°C. We conclude that the recrystallization of V₂O₅ nanoplates results in the anomalous behavior in voltage-dependent current characteristics. © 2013 Chang-Hee Kim et al.