The Observation of Stacking-Fault Tetrahedra in III-V Compounds

B. C. De Cooman; S. McKernan; C. B. Carter; J. R. Ralston; G. W. Wicks; L. F. Eastman

doi:10.1080/09500838708205254

The Observation of Stacking-Fault Tetrahedra in III-V Compounds

B. C. De Cooman
, S. McKernan
, C. B. Carter
, J. R. Ralston
, G. W. Wicks
, L. F. Eastman

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The first observations of stacking-fault tetrahedra in ion-implanted III-V compounds are reported. The structure and orientation of the stacking-fault tetrahedra are briefly described. The tetrahedra are present in the near-surface region that recrystallized during the annealing. High-resolution images suggest that the stacking-fault tetrahedra are of the vacancy type. © 1987 Taylor & Francis Group, LLC.

Original language	English
Pages (from-to)	85-90
Number of pages	6
Journal	Philosophical Magazine Letters
Volume	56
Issue number	3
DOIs	https://doi.org/10.1080/09500838708205254
State	Published - Jan 1 1987
Externally published	Yes

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10.1080/09500838708205254

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title = "The Observation of Stacking-Fault Tetrahedra in III-V Compounds",

abstract = "The first observations of stacking-fault tetrahedra in ion-implanted III-V compounds are reported. The structure and orientation of the stacking-fault tetrahedra are briefly described. The tetrahedra are present in the near-surface region that recrystallized during the annealing. High-resolution images suggest that the stacking-fault tetrahedra are of the vacancy type. {\textcopyright} 1987 Taylor \& Francis Group, LLC.",

author = "\{De Cooman\}, \{B. C.\} and S. McKernan and Carter, \{C. B.\} and Ralston, \{J. R.\} and Wicks, \{G. W.\} and Eastman, \{L. F.\}",

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AU - Wicks, G. W.

AU - Eastman, L. F.

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N2 - The first observations of stacking-fault tetrahedra in ion-implanted III-V compounds are reported. The structure and orientation of the stacking-fault tetrahedra are briefly described. The tetrahedra are present in the near-surface region that recrystallized during the annealing. High-resolution images suggest that the stacking-fault tetrahedra are of the vacancy type. © 1987 Taylor & Francis Group, LLC.

AB - The first observations of stacking-fault tetrahedra in ion-implanted III-V compounds are reported. The structure and orientation of the stacking-fault tetrahedra are briefly described. The tetrahedra are present in the near-surface region that recrystallized during the annealing. High-resolution images suggest that the stacking-fault tetrahedra are of the vacancy type. © 1987 Taylor & Francis Group, LLC.

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JO - Philosophical Magazine Letters

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The Observation of Stacking-Fault Tetrahedra in III-V Compounds

Abstract

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