The structure of InAs/GaSb superlattices

B. C. De Cooman; C. B. Carter; G. W. Wicks; T. Tanoue; L. F. Eastman

doi:10.1016/0040-6090(89)90621-4

The structure of InAs/GaSb superlattices

B. C. De Cooman
, C. B. Carter
, G. W. Wicks
, T. Tanoue
, L. F. Eastman

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The structure of InAs/GaSb superlattices has been studied by transmission electron microscopy. It has been found that several factors combine to cause the present poor quality of these superlattice structures. A new structure, which differs from the expected sphalerite structure, has been identified in the GaSb epilayers. The InAs shows a strong tendency to grow by an island mode which causes the heterojunctions to undulate. As expected, there is a bending of lattice planes at the heterojunctions which causes the observed dechanneling in Rutherford backscattering spectra but the interface is not atomically abrupt as has been assumed in earlier models. © 1989.

Original language	English
Pages (from-to)	49-62
Number of pages	14
Journal	Thin Solid Films
Volume	170
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(89)90621-4
State	Published - Mar 1 1989
Externally published	Yes

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title = "The structure of InAs/GaSb superlattices",

abstract = "The structure of InAs/GaSb superlattices has been studied by transmission electron microscopy. It has been found that several factors combine to cause the present poor quality of these superlattice structures. A new structure, which differs from the expected sphalerite structure, has been identified in the GaSb epilayers. The InAs shows a strong tendency to grow by an island mode which causes the heterojunctions to undulate. As expected, there is a bending of lattice planes at the heterojunctions which causes the observed dechanneling in Rutherford backscattering spectra but the interface is not atomically abrupt as has been assumed in earlier models. {\textcopyright} 1989.",

author = "\{De Cooman\}, \{B. C.\} and Carter, \{C. B.\} and Wicks, \{G. W.\} and T. Tanoue and Eastman, \{L. F.\}",

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doi = "10.1016/0040-6090(89)90621-4",

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T1 - The structure of InAs/GaSb superlattices

AU - De Cooman, B. C.

AU - Carter, C. B.

AU - Wicks, G. W.

AU - Tanoue, T.

AU - Eastman, L. F.

PY - 1989/3/1

Y1 - 1989/3/1

N2 - The structure of InAs/GaSb superlattices has been studied by transmission electron microscopy. It has been found that several factors combine to cause the present poor quality of these superlattice structures. A new structure, which differs from the expected sphalerite structure, has been identified in the GaSb epilayers. The InAs shows a strong tendency to grow by an island mode which causes the heterojunctions to undulate. As expected, there is a bending of lattice planes at the heterojunctions which causes the observed dechanneling in Rutherford backscattering spectra but the interface is not atomically abrupt as has been assumed in earlier models. © 1989.

AB - The structure of InAs/GaSb superlattices has been studied by transmission electron microscopy. It has been found that several factors combine to cause the present poor quality of these superlattice structures. A new structure, which differs from the expected sphalerite structure, has been identified in the GaSb epilayers. The InAs shows a strong tendency to grow by an island mode which causes the heterojunctions to undulate. As expected, there is a bending of lattice planes at the heterojunctions which causes the observed dechanneling in Rutherford backscattering spectra but the interface is not atomically abrupt as has been assumed in earlier models. © 1989.

UR - https://www.scopus.com/pages/publications/0024620055

U2 - 10.1016/0040-6090(89)90621-4

DO - 10.1016/0040-6090(89)90621-4

M3 - Article

SN - 0040-6090

VL - 170

SP - 49

EP - 62

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

The structure of InAs/GaSb superlattices

Abstract

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