Abstract
A microscopic theory of gain in a group-III nitride quantum well laser is presented. The approach, which treats carrier correlations at the level of quantum kinetic theory, gives a consistent account of plasma and excitonic effects in an inhomogeneously broadened system.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Pages | 487-494 |
| Number of pages | 8 |
| Volume | 468 |
| State | Published - Jan 1 1997 |
| Externally published | Yes |
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