Theory of gain in InGaN quantum well lasers

W. W. Chow; A. F. Wright; A. Girndt; F. Jahnke; S. W. Koch

Theory of gain in InGaN quantum well lasers

W. W. Chow
, A. F. Wright
, A. Girndt
, F. Jahnke
, S. W. Koch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An approach based on the Semiconductor Bloch Equation with carrier correlation effects treated at the level of quantum kinetic theory in the Markovian limit was developed for group II-nitride lasers characterization. It gives description of plasma and excitonic effects, which play important roles in the optical properties of group-II nitride lasers. The effects of inhomogeneous broadening due to compositional variations are also discussed.

Original language	English
Title of host publication	LEOS Summer Topical Meeting
Pages	39-40
Number of pages	2
State	Published - Jan 1 1997
Externally published	Yes

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title = "Theory of gain in InGaN quantum well lasers",

abstract = "An approach based on the Semiconductor Bloch Equation with carrier correlation effects treated at the level of quantum kinetic theory in the Markovian limit was developed for group II-nitride lasers characterization. It gives description of plasma and excitonic effects, which play important roles in the optical properties of group-II nitride lasers. The effects of inhomogeneous broadening due to compositional variations are also discussed.",

author = "Chow, \{W. W.\} and Wright, \{A. F.\} and A. Girndt and F. Jahnke and Koch, \{S. W.\}",

year = "1997",

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language = "English",

pages = "39--40",

booktitle = "LEOS Summer Topical Meeting",

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T1 - Theory of gain in InGaN quantum well lasers

AU - Chow, W. W.

AU - Wright, A. F.

AU - Girndt, A.

AU - Jahnke, F.

AU - Koch, S. W.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - An approach based on the Semiconductor Bloch Equation with carrier correlation effects treated at the level of quantum kinetic theory in the Markovian limit was developed for group II-nitride lasers characterization. It gives description of plasma and excitonic effects, which play important roles in the optical properties of group-II nitride lasers. The effects of inhomogeneous broadening due to compositional variations are also discussed.

AB - An approach based on the Semiconductor Bloch Equation with carrier correlation effects treated at the level of quantum kinetic theory in the Markovian limit was developed for group II-nitride lasers characterization. It gives description of plasma and excitonic effects, which play important roles in the optical properties of group-II nitride lasers. The effects of inhomogeneous broadening due to compositional variations are also discussed.

UR - https://www.scopus.com/pages/publications/0030674413

M3 - Conference contribution

SP - 39

EP - 40

BT - LEOS Summer Topical Meeting

ER -

Theory of gain in InGaN quantum well lasers

Abstract

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