Theory of laser gain in a Ge-on-Si laser

W. W. Chow

doi:10.1109/ISLC.2012.6348303

Theory of laser gain in a Ge-on-Si laser

W. W. Chow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A theory is developed for the gain versus injected current density under different tensile strains and doping densities. Many-body effects are included to account for energy renormalization modifications to the impact of n-doping. © 2012 IEEE.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Pages	12-13
Number of pages	2
DOIs	https://doi.org/10.1109/ISLC.2012.6348303
State	Published - Dec 11 2012
Externally published	Yes

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title = "Theory of laser gain in a Ge-on-Si laser",

abstract = "A theory is developed for the gain versus injected current density under different tensile strains and doping densities. Many-body effects are included to account for energy renormalization modifications to the impact of n-doping. {\textcopyright} 2012 IEEE.",

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doi = "10.1109/ISLC.2012.6348303",

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M3 - Conference contribution

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EP - 13

BT - Conference Digest - IEEE International Semiconductor Laser Conference

ER -

Theory of laser gain in a Ge-on-Si laser

Abstract

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