Abstract
A theory for describing nonequilibrium dynamics in a semiconductor quantum-dot laser is presented. This theory is applied to a microcavity laser with a gain region consisting of an inhomogeneous distribution of quantum dots, a quantum-well wetting layer, and injection pumped bulk regions. Numerical results are presented and the effects of spectral hole burning, plasma heating, and many-body effects are analyzed. © 2005 IEEE.
| Original language | English |
|---|---|
| Pages (from-to) | 495-505 |
| Number of pages | 11 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 41 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 1 2005 |
| Externally published | Yes |
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