Thermal stability of PtSi contact to Ge<inf>x</inf>Si<inf>1-x</inf>

Q. Z. Hong; J. G. Zhu; C. B. Carter; J. W. Mayer

doi:10.1063/1.104472

Thermal stability of PtSi contact to Ge<inf>x</inf>Si<inf>1-x</inf>

Q. Z. Hong
, J. G. Zhu
, C. B. Carter
, J. W. Mayer

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Thermal stability of PtSi contact to epitaxial Ge0.5Si 0.5/(100)Si has been investigated. The PtSi layer remained structurally and morphologically intact on the epitaxial Ge-Si alloy at temperatures around 650°C. When annealed at higher temperatures, PtSi penetrated locally into the alloy, although no chemical reaction was observed. The observed stability of PtSi is explained on the basis of a ternary Pt-Ge-Si equilibrium phase diagram. Other choices of contact compounds on Ge-Si alloys are also discussed.

Original language	English
Pages (from-to)	905-907
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	9
DOIs	https://doi.org/10.1063/1.104472
State	Published - Dec 1 1991
Externally published	Yes

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10.1063/1.104472

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title = "Thermal stability of PtSi contact to GexSi1-x",

abstract = "Thermal stability of PtSi contact to epitaxial Ge0.5Si 0.5/(100)Si has been investigated. The PtSi layer remained structurally and morphologically intact on the epitaxial Ge-Si alloy at temperatures around 650°C. When annealed at higher temperatures, PtSi penetrated locally into the alloy, although no chemical reaction was observed. The observed stability of PtSi is explained on the basis of a ternary Pt-Ge-Si equilibrium phase diagram. Other choices of contact compounds on Ge-Si alloys are also discussed.",

author = "Hong, \{Q. Z.\} and Zhu, \{J. G.\} and Carter, \{C. B.\} and Mayer, \{J. W.\}",

year = "1991",

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T1 - Thermal stability of PtSi contact to GexSi1-x

AU - Hong, Q. Z.

AU - Zhu, J. G.

AU - Carter, C. B.

AU - Mayer, J. W.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - Thermal stability of PtSi contact to epitaxial Ge0.5Si 0.5/(100)Si has been investigated. The PtSi layer remained structurally and morphologically intact on the epitaxial Ge-Si alloy at temperatures around 650°C. When annealed at higher temperatures, PtSi penetrated locally into the alloy, although no chemical reaction was observed. The observed stability of PtSi is explained on the basis of a ternary Pt-Ge-Si equilibrium phase diagram. Other choices of contact compounds on Ge-Si alloys are also discussed.

AB - Thermal stability of PtSi contact to epitaxial Ge0.5Si 0.5/(100)Si has been investigated. The PtSi layer remained structurally and morphologically intact on the epitaxial Ge-Si alloy at temperatures around 650°C. When annealed at higher temperatures, PtSi penetrated locally into the alloy, although no chemical reaction was observed. The observed stability of PtSi is explained on the basis of a ternary Pt-Ge-Si equilibrium phase diagram. Other choices of contact compounds on Ge-Si alloys are also discussed.

UR - https://www.scopus.com/pages/publications/0000410860

U2 - 10.1063/1.104472

DO - 10.1063/1.104472

M3 - Article

SN - 0003-6951

VL - 58

SP - 905

EP - 907

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Thermal stability of PtSi contact to Ge<inf>x</inf>Si<inf>1-x</inf>

Abstract

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