Thin-film NiO‒Al2O3 reaction couples prepared by CVD

D. W. Susnitzky; S. R. Summerfelt; C. B. Carter

doi:10.1016/S0036-9748(88)80121-2

Thin-film NiO‒Al2O3 reaction couples prepared by CVD

D. W. Susnitzky
, S. R. Summerfelt
, C. B. Carter

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A CVD technique for preparing thin-film reaction couples for examination in the TEM has been described. Epitactic relations between NiO, NiAl2O4 and Al2O3 have been studied with this technique. Preferred growth directions in the NiAl2O4 reaction layer have been determined and defects associated with the phase transformation have also been monitored. © 1988 Pergamon Press plc.

Original language	English
Pages (from-to)	1149-1154
Number of pages	6
Journal	Scripta Metallurgica
Volume	22
Issue number	7
DOIs	https://doi.org/10.1016/S0036-9748(88)80121-2
State	Published - Jan 1 1988
Externally published	Yes

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10.1016/S0036-9748(88)80121-2

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title = "Thin-film NiO‒Al2O3 reaction couples prepared by CVD",

abstract = "A CVD technique for preparing thin-film reaction couples for examination in the TEM has been described. Epitactic relations between NiO, NiAl2O4 and Al2O3 have been studied with this technique. Preferred growth directions in the NiAl2O4 reaction layer have been determined and defects associated with the phase transformation have also been monitored. {\textcopyright} 1988 Pergamon Press plc.",

author = "Susnitzky, \{D. W.\} and Summerfelt, \{S. R.\} and Carter, \{C. B.\}",

year = "1988",

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doi = "10.1016/S0036-9748(88)80121-2",

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T1 - Thin-film NiO‒Al2O3 reaction couples prepared by CVD

AU - Susnitzky, D. W.

AU - Summerfelt, S. R.

AU - Carter, C. B.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - A CVD technique for preparing thin-film reaction couples for examination in the TEM has been described. Epitactic relations between NiO, NiAl2O4 and Al2O3 have been studied with this technique. Preferred growth directions in the NiAl2O4 reaction layer have been determined and defects associated with the phase transformation have also been monitored. © 1988 Pergamon Press plc.

AB - A CVD technique for preparing thin-film reaction couples for examination in the TEM has been described. Epitactic relations between NiO, NiAl2O4 and Al2O3 have been studied with this technique. Preferred growth directions in the NiAl2O4 reaction layer have been determined and defects associated with the phase transformation have also been monitored. © 1988 Pergamon Press plc.

UR - https://www.scopus.com/pages/publications/0024048336

U2 - 10.1016/S0036-9748(88)80121-2

DO - 10.1016/S0036-9748(88)80121-2

M3 - Article

SN - 0036-9748

VL - 22

SP - 1149

EP - 1154

JO - Scripta Metallurgica

JF - Scripta Metallurgica

IS - 7

ER -

Thin-film NiO‒Al2O3 reaction couples prepared by CVD

Abstract

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