Thin terahertz detectors and emitters based on low-temperature-grown GaAs on sapphire

O. Mitrofanov; I. Brener; M. C. Wanke; R. R. Ruel; J. D. Wynn; A. J. Bruce; J. Federici

doi:10.1109/cleo.2000.907347

Thin terahertz detectors and emitters based on low-temperature-grown GaAs on sapphire

O. Mitrofanov
, I. Brener
, M. C. Wanke
, R. R. Ruel
, J. D. Wynn
, A. J. Bruce
, J. Federici

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Presented is a fabrication technique, alternative to epitaxial liftoff, which enhances the performance of THz antenna detectors and allows building probe structures on top of the antenna dipole by means of etching of GaAs substrate. When used as emitters, a sample to be imaged can be brought as close as 1 μm to the THz emission point. The application of these devices for THz near-field-imaging will be discussed.

Original language	English
Title of host publication	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Pages	528-529
Number of pages	2
DOIs	https://doi.org/10.1109/cleo.2000.907347
State	Published - Jan 1 2000
Externally published	Yes

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10.1109/cleo.2000.907347

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title = "Thin terahertz detectors and emitters based on low-temperature-grown GaAs on sapphire",

abstract = "Presented is a fabrication technique, alternative to epitaxial liftoff, which enhances the performance of THz antenna detectors and allows building probe structures on top of the antenna dipole by means of etching of GaAs substrate. When used as emitters, a sample to be imaged can be brought as close as 1 μm to the THz emission point. The application of these devices for THz near-field-imaging will be discussed.",

author = "O. Mitrofanov and I. Brener and Wanke, \{M. C.\} and Ruel, \{R. R.\} and Wynn, \{J. D.\} and Bruce, \{A. J.\} and J. Federici",

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AU - Mitrofanov, O.

AU - Brener, I.

AU - Wanke, M. C.

AU - Ruel, R. R.

AU - Wynn, J. D.

AU - Bruce, A. J.

AU - Federici, J.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Presented is a fabrication technique, alternative to epitaxial liftoff, which enhances the performance of THz antenna detectors and allows building probe structures on top of the antenna dipole by means of etching of GaAs substrate. When used as emitters, a sample to be imaged can be brought as close as 1 μm to the THz emission point. The application of these devices for THz near-field-imaging will be discussed.

AB - Presented is a fabrication technique, alternative to epitaxial liftoff, which enhances the performance of THz antenna detectors and allows building probe structures on top of the antenna dipole by means of etching of GaAs substrate. When used as emitters, a sample to be imaged can be brought as close as 1 μm to the THz emission point. The application of these devices for THz near-field-imaging will be discussed.

UR - https://www.scopus.com/pages/publications/0034539232

U2 - 10.1109/cleo.2000.907347

DO - 10.1109/cleo.2000.907347

M3 - Conference contribution

SP - 528

EP - 529

BT - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

ER -

Thin terahertz detectors and emitters based on low-temperature-grown GaAs on sapphire

Abstract

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