Threshold conditions for an ultraviolet wavelength GaN quantum-well laser

W. W. Chow; M. Hagerott Crawford; A. Girndt; S. W. Koch

doi:10.1109/2944.704111

Threshold conditions for an ultraviolet wavelength GaN quantum-well laser

W. W. Chow
, M. Hagerott Crawford
, A. Girndt
, S. W. Koch

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This paper describes an analysis of the threshold conditions for a GaN-AlGaN strained quantum-well (QW) laser. Gain spectra are computed using a many-body microscopic laser theory. The spontaneous emission rates are extracted from the gain spectra using a phenomenological expression based on energy conservation arguments. From the gain and spontaneous emission spectra, threshold current densities are estimated. Inhomogeneous broadening due to spatial variations in QW thickness are included in the analysis. Gain-current characteristics are determined for a number of laser heterostructure designs where the GaN QW width and Al composition of the AlGaN barrier material are varied.

Original language	English
Pages (from-to)	514-519
Number of pages	6
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	4
Issue number	3
DOIs	https://doi.org/10.1109/2944.704111
State	Published - May 1 1998
Externally published	Yes

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title = "Threshold conditions for an ultraviolet wavelength GaN quantum-well laser",

abstract = "This paper describes an analysis of the threshold conditions for a GaN-AlGaN strained quantum-well (QW) laser. Gain spectra are computed using a many-body microscopic laser theory. The spontaneous emission rates are extracted from the gain spectra using a phenomenological expression based on energy conservation arguments. From the gain and spontaneous emission spectra, threshold current densities are estimated. Inhomogeneous broadening due to spatial variations in QW thickness are included in the analysis. Gain-current characteristics are determined for a number of laser heterostructure designs where the GaN QW width and Al composition of the AlGaN barrier material are varied.",

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T1 - Threshold conditions for an ultraviolet wavelength GaN quantum-well laser

AU - Chow, W. W.

AU - Hagerott Crawford, M.

AU - Girndt, A.

AU - Koch, S. W.

PY - 1998/5/1

Y1 - 1998/5/1

N2 - This paper describes an analysis of the threshold conditions for a GaN-AlGaN strained quantum-well (QW) laser. Gain spectra are computed using a many-body microscopic laser theory. The spontaneous emission rates are extracted from the gain spectra using a phenomenological expression based on energy conservation arguments. From the gain and spontaneous emission spectra, threshold current densities are estimated. Inhomogeneous broadening due to spatial variations in QW thickness are included in the analysis. Gain-current characteristics are determined for a number of laser heterostructure designs where the GaN QW width and Al composition of the AlGaN barrier material are varied.

AB - This paper describes an analysis of the threshold conditions for a GaN-AlGaN strained quantum-well (QW) laser. Gain spectra are computed using a many-body microscopic laser theory. The spontaneous emission rates are extracted from the gain spectra using a phenomenological expression based on energy conservation arguments. From the gain and spontaneous emission spectra, threshold current densities are estimated. Inhomogeneous broadening due to spatial variations in QW thickness are included in the analysis. Gain-current characteristics are determined for a number of laser heterostructure designs where the GaN QW width and Al composition of the AlGaN barrier material are varied.

UR - https://www.scopus.com/pages/publications/3843074169

U2 - 10.1109/2944.704111

DO - 10.1109/2944.704111

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VL - 4

SP - 514

EP - 519

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 3

ER -

Threshold conditions for an ultraviolet wavelength GaN quantum-well laser

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