Abstract
Summary form only given. The time evolution of the photoluminescence spectrum due to dense electron-hole plasmas in submicron InGaAsP films is examined with 200-ps temporal and 6-nm spectral resolution. It is found that the changes in the spectra reflect the decrease of the photoexcited electron and hole populations due to recombination processes and plasma expansion. By fitting theoretical curves to these data, the photoexcited carrier density as a function of time is determined. Details of this analysis are discussed. Similar measurements for films of other stoichiometries at several initial carrier densities are presented. The implications of these measurements for long-wavelength device performance are considered.
| Original language | English |
|---|---|
| State | Published - Dec 1 1985 |
| Externally published | Yes |
| Event | CLEO '85: 5th IEEE/OSA Conference on Lasers and Electro-Optics. - Duration: Dec 1 1985 → … |
Conference
| Conference | CLEO '85: 5th IEEE/OSA Conference on Lasers and Electro-Optics. |
|---|---|
| Period | 12/1/85 → … |
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