TIN-DOPING INDUCED DEFECTS IN GaAs FILMS GROWN BY MOLECULAR BEAM EPITAXY.

S. H. Chen; P. Enquist; C. B. Carter

TIN-DOPING INDUCED DEFECTS IN GaAs FILMS GROWN BY MOLECULAR BEAM EPITAXY.

S. H. Chen
, P. Enquist
, C. B. Carter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Heavily Sn-doped GaAs films have been grown by molecular-beam epitaxy and found to contain single-crystal Sn particles situated in the near-surface region of the epilayer GaAs. The morphology and chemical composition of the particles have been examined by using cross-section transmission electron microscopy combined with energy-dispersive x-ray spectroscopy. Different growth conditions were used to study the Sn-particle formation and high-resolution transmission electron microscopy was used to investigate microstructures. The observations are discussed in terms of several models previously proposed for these phenomena.

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Pages	369-374
Number of pages	6
Volume	41
State	Published - Dec 1 1985
Externally published	Yes

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title = "TIN-DOPING INDUCED DEFECTS IN GaAs FILMS GROWN BY MOLECULAR BEAM EPITAXY.",

abstract = "Heavily Sn-doped GaAs films have been grown by molecular-beam epitaxy and found to contain single-crystal Sn particles situated in the near-surface region of the epilayer GaAs. The morphology and chemical composition of the particles have been examined by using cross-section transmission electron microscopy combined with energy-dispersive x-ray spectroscopy. Different growth conditions were used to study the Sn-particle formation and high-resolution transmission electron microscopy was used to investigate microstructures. The observations are discussed in terms of several models previously proposed for these phenomena.",

author = "Chen, \{S. H.\} and P. Enquist and Carter, \{C. B.\}",

year = "1985",

month = dec,

day = "1",

language = "English",

isbn = "0931837065",

volume = "41",

pages = "369--374",

booktitle = "Materials Research Society Symposia Proceedings",

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T1 - TIN-DOPING INDUCED DEFECTS IN GaAs FILMS GROWN BY MOLECULAR BEAM EPITAXY.

AU - Chen, S. H.

AU - Enquist, P.

AU - Carter, C. B.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - Heavily Sn-doped GaAs films have been grown by molecular-beam epitaxy and found to contain single-crystal Sn particles situated in the near-surface region of the epilayer GaAs. The morphology and chemical composition of the particles have been examined by using cross-section transmission electron microscopy combined with energy-dispersive x-ray spectroscopy. Different growth conditions were used to study the Sn-particle formation and high-resolution transmission electron microscopy was used to investigate microstructures. The observations are discussed in terms of several models previously proposed for these phenomena.

AB - Heavily Sn-doped GaAs films have been grown by molecular-beam epitaxy and found to contain single-crystal Sn particles situated in the near-surface region of the epilayer GaAs. The morphology and chemical composition of the particles have been examined by using cross-section transmission electron microscopy combined with energy-dispersive x-ray spectroscopy. Different growth conditions were used to study the Sn-particle formation and high-resolution transmission electron microscopy was used to investigate microstructures. The observations are discussed in terms of several models previously proposed for these phenomena.

UR - https://www.scopus.com/pages/publications/0022264875

M3 - Conference contribution

SN - 0931837065

VL - 41

SP - 369

EP - 374

BT - Materials Research Society Symposia Proceedings

ER -

TIN-DOPING INDUCED DEFECTS IN GaAs FILMS GROWN BY MOLECULAR BEAM EPITAXY.

Abstract

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