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Transition level dependence of Raman intensities in carbon nanotubes: Role of exciton decay

  • S. V. Goupalov
  • , B. C. Satishkumar
  • , S. K. Doorn

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present the first direct comparison of intensities of Raman scattering from the radial breathing mode of semiconducting single-walled carbon nanotubes under excitations resonant with different electronic transitions.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages1019-1020
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 -
Duration: Dec 1 2007 → …

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
Period12/1/07 → …

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