Transitions between channel and contact regimes of low-frequency noise in many-layer MoS<inf>2</inf> field effect transistors

Low-frequency noise studies in transition metal dichalcogenides have considered the layer-thickness dependence but generally do not separate channel contributions from those of contact/access regions. Here, we study the voltage-dependent 1/f noise and the resistance correlation in MoS2 FETs with an ∼142 atomic layer-thickness channel and three different lengths. The gate-voltage dependence of noise can be separated into a channel contribution, with a comparable Hooge parameter for the three devices and a contact/access region contribution. Separation of these contributions allows the evaluation of the channel noise mechanism and can be used to explain the length-dependence of the transition region between contact- and channel-dominated regimes.