Transmission electron microscopy studies on lateral reaction of GaAs with Ni

S. H. Chen; C. B. Carter; C. J. Palmstrom; T. Ohashi

doi:10.1063/1.96675

Transmission electron microscopy studies on lateral reaction of GaAs with Ni

S. H. Chen
, C. B. Carter
, C. J. Palmstrom
, T. Ohashi

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A method is described for preparing lateral Ni-GaAs diffusion couples for transmission electron microscopy (TEM) investigations. The diffusion couples are annealed in situ in a TEM using a hot stage. The growth of a ternary phase has been observed, and shows parabolic time dependence of the growth. At 200-300°C, Ni is the predominant diffusion species while Ga and As are essentially immobile. The experimental results are compared with previous investigations of the reactions of Ni thin films with bulk GaAs.

Original language	English
Pages (from-to)	803-805
Number of pages	3
Journal	Applied Physics Letters
Volume	48
Issue number	12
DOIs	https://doi.org/10.1063/1.96675
State	Published - Dec 1 1986
Externally published	Yes

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title = "Transmission electron microscopy studies on lateral reaction of GaAs with Ni",

abstract = "A method is described for preparing lateral Ni-GaAs diffusion couples for transmission electron microscopy (TEM) investigations. The diffusion couples are annealed in situ in a TEM using a hot stage. The growth of a ternary phase has been observed, and shows parabolic time dependence of the growth. At 200-300°C, Ni is the predominant diffusion species while Ga and As are essentially immobile. The experimental results are compared with previous investigations of the reactions of Ni thin films with bulk GaAs.",

author = "Chen, \{S. H.\} and Carter, \{C. B.\} and Palmstrom, \{C. J.\} and T. Ohashi",

year = "1986",

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AU - Chen, S. H.

AU - Carter, C. B.

AU - Palmstrom, C. J.

AU - Ohashi, T.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - A method is described for preparing lateral Ni-GaAs diffusion couples for transmission electron microscopy (TEM) investigations. The diffusion couples are annealed in situ in a TEM using a hot stage. The growth of a ternary phase has been observed, and shows parabolic time dependence of the growth. At 200-300°C, Ni is the predominant diffusion species while Ga and As are essentially immobile. The experimental results are compared with previous investigations of the reactions of Ni thin films with bulk GaAs.

AB - A method is described for preparing lateral Ni-GaAs diffusion couples for transmission electron microscopy (TEM) investigations. The diffusion couples are annealed in situ in a TEM using a hot stage. The growth of a ternary phase has been observed, and shows parabolic time dependence of the growth. At 200-300°C, Ni is the predominant diffusion species while Ga and As are essentially immobile. The experimental results are compared with previous investigations of the reactions of Ni thin films with bulk GaAs.

UR - https://www.scopus.com/pages/publications/11644256711

U2 - 10.1063/1.96675

DO - 10.1063/1.96675

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VL - 48

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EP - 805

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Transmission electron microscopy studies on lateral reaction of GaAs with Ni

Abstract

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