Transmission electron microscopy studies on the lateral growth of nickel silicides

S. H. Chen; L. R. Zheng; C. B. Carter; J. W. Mayer

doi:10.1063/1.335482

Transmission electron microscopy studies on the lateral growth of nickel silicides

S. H. Chen
, L. R. Zheng
, C. B. Carter
, J. W. Mayer

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Transmission electron microscopy (TEM) has been utilized to study the nickel-silicide growth in self-supported lateral-diffusion, thin-film couples by overlapping deposited layers of Ni and Si between two silicon oxide deposited films. Energy-dispersive x-ray spectroscopy, microdiffraction, and selected area diffraction were used to identify the Ni-silicide phases and their crystal structures. Long-grain growth of Ni2Si, as a result of phase-boundary migration induced by diffusion, was observed during in situ annealing between 500 and 750°C in TEM. No preferred orientation or particular crystallographic relationship was found among the long grains.

Original language	English
Pages (from-to)	258-263
Number of pages	6
Journal	Journal of Applied Physics
Volume	57
Issue number	2
DOIs	https://doi.org/10.1063/1.335482
State	Published - Dec 1 1985
Externally published	Yes

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title = "Transmission electron microscopy studies on the lateral growth of nickel silicides",

abstract = "Transmission electron microscopy (TEM) has been utilized to study the nickel-silicide growth in self-supported lateral-diffusion, thin-film couples by overlapping deposited layers of Ni and Si between two silicon oxide deposited films. Energy-dispersive x-ray spectroscopy, microdiffraction, and selected area diffraction were used to identify the Ni-silicide phases and their crystal structures. Long-grain growth of Ni2Si, as a result of phase-boundary migration induced by diffusion, was observed during in situ annealing between 500 and 750°C in TEM. No preferred orientation or particular crystallographic relationship was found among the long grains.",

author = "Chen, \{S. H.\} and Zheng, \{L. R.\} and Carter, \{C. B.\} and Mayer, \{J. W.\}",

year = "1985",

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T1 - Transmission electron microscopy studies on the lateral growth of nickel silicides

AU - Chen, S. H.

AU - Zheng, L. R.

AU - Carter, C. B.

AU - Mayer, J. W.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - Transmission electron microscopy (TEM) has been utilized to study the nickel-silicide growth in self-supported lateral-diffusion, thin-film couples by overlapping deposited layers of Ni and Si between two silicon oxide deposited films. Energy-dispersive x-ray spectroscopy, microdiffraction, and selected area diffraction were used to identify the Ni-silicide phases and their crystal structures. Long-grain growth of Ni2Si, as a result of phase-boundary migration induced by diffusion, was observed during in situ annealing between 500 and 750°C in TEM. No preferred orientation or particular crystallographic relationship was found among the long grains.

AB - Transmission electron microscopy (TEM) has been utilized to study the nickel-silicide growth in self-supported lateral-diffusion, thin-film couples by overlapping deposited layers of Ni and Si between two silicon oxide deposited films. Energy-dispersive x-ray spectroscopy, microdiffraction, and selected area diffraction were used to identify the Ni-silicide phases and their crystal structures. Long-grain growth of Ni2Si, as a result of phase-boundary migration induced by diffusion, was observed during in situ annealing between 500 and 750°C in TEM. No preferred orientation or particular crystallographic relationship was found among the long grains.

UR - https://www.scopus.com/pages/publications/0012928515

U2 - 10.1063/1.335482

DO - 10.1063/1.335482

M3 - Article

SN - 0021-8979

VL - 57

SP - 258

EP - 263

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Transmission electron microscopy studies on the lateral growth of nickel silicides

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