Skip to main navigation Skip to search Skip to main content

Trapping of implanted He at Cu/Nb interfaces measured by neutron reflectometry

  • Mikhail Zhernenkov
  • , Michael S. Jablin
  • , Amit Misra
  • , Michael Nastasi
  • , Yongqiang Wang
  • , Michael J. Demkowicz
  • , Jon Kevin Scott Baldwin
  • , Jaroslaw Majewski

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

Neutron reflectometry is used to characterize physical vapor deposited [Cu/Nb]x/Si layered nanocomposites exposed to extreme helium ion doses. The effects of He ions on the interfacial roughness, layer swelling, and chemical mixing have been measured. Regions of high He concentration were localized at Cu/Nb interfaces while bulk Cu and Nb layers remained intact. This remarkable behavior is attributed to the efficient trapping and storage of He at interfaces as compared to bulk.

Original languageEnglish
Article number241913
JournalApplied Physics Letters
Volume98
Issue number24
DOIs
StatePublished - Jun 13 2011

Fingerprint

Dive into the research topics of 'Trapping of implanted He at Cu/Nb interfaces measured by neutron reflectometry'. Together they form a unique fingerprint.

Cite this