Abstract
A tunable metasurface based on silicon doped indium oxide has been investigated. The amplitude of reflected light was actively tuned with a gate bias, demonstrating 57% reflectance change and 366 nm of resonance wavelength shift.
| Original language | English |
|---|---|
| Title of host publication | Optics InfoBase Conference Papers |
| Volume | Part F135-NOMA 2019 |
| DOIs | |
| State | Published - Jan 1 2019 |
| Externally published | Yes |
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