Tuning the electronic structure of single-walled carbon nanotube by high-pressure H 2 exposure

We report on an electronic structure change of single-walled carbon nanotube (SWNT) on hexagonal boron nitride due to electron doping via high-pressure H ₂ exposure. The fractional coverage of hydrogenated carbon atom is estimated to be at least θ = 0.163 from the in situ I _ds -V _g measurements of the release process. Raman spectroscopy and x-ray photoelectron spectroscopy were carried out to support the in situ electrical measurements. In particular, we used the dissociative Langmuir-type model to yield the desorption coefficient k _des by fitting it to the in situ electrical data. Finally, we applied this hydrogenation method to the SWNT network on the commercial Si/SiO ₂ substrate to open the possibility of the scalable n-type semiconducting SWNT FETs.