Abstract
We have imaged with the tunneling microscope the microscopic surface topography of germanium layers grown by molecular-beam epitaxy on Si(111)-7×7. The surface structures corresponding to Ge(111)-c2×8 and Ge(111)-7×7 are resolved. The Ge-c2×8 structure is shown to consist of a coherent combination of two simpler units both of which exist independently on the surface. The associated phase boundaries are illustrated. The Ge 7×7 structure is shown to be similar to that obtained for Si(111). Defects in the cell are also imaged. © 1985 The American Physical Society.
| Original language | English |
|---|---|
| Pages (from-to) | 2678-2680 |
| Number of pages | 3 |
| Journal | Physical Review Letters |
| Volume | 54 |
| Issue number | 25 |
| DOIs | |
| State | Published - Jan 1 1985 |
| Externally published | Yes |
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