Tunneling microscopy of silicon and germanium: Si(111) 7x7, SnGe(111) 7 Χ7, GeSi(111) 5 Χ 5, Si(111) 9 Χ 9, Ge(111) 2Χ8, Ge(100) 2Χ1, Si(110) 5 Χ1

The tunneling microscope has been used to study the low-index faces of silicon and germanium. Si(1 1 1) 7 Χ7 and 9 X 9, GeSi (111) 5 X 5, and SnGe(111) 7 X 7 are discussed in the light of the dimer—adatom—stacking fault structural model. Ge(111) 2 X 8 is compared to Si(111), Ge(100) is shown and compared to Si(100), and new structures on the Si(110) 5 X 1 surface are shown. © 1988, American Vacuum Society. All rights reserved.