Ultrafast characterization of semiconductor gain and absorber devices for mode-locked VECSELs

Caleb Baker; Maik Scheller; Hwang Jye Yang; Stephan W. Koch; Ronald J. Jones; Jerome V. Moloney; Antje Ruiz Perez; Wolfgang Stolz; Sadhvikas Addamane; Ganesh Balakrishnan

doi:10.1117/12.2213671

Ultrafast characterization of semiconductor gain and absorber devices for mode-locked VECSELs

Caleb Baker
, Maik Scheller
, Hwang Jye Yang
, Stephan W. Koch
, Ronald J. Jones
, Jerome V. Moloney
, Antje Ruiz Perez
, Wolfgang Stolz
, Sadhvikas Addamane
, Ganesh Balakrishnan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present a comprehensive characterization of semiconductor gain and absorber devices utilizing novel measurement techniques. Using a 20fs probe laser, a time resolution in the few femtosecond range is achieved in traditional pump and probe measurements performed on VECSELs and SESAMs. In-situ characterizations of VECSEL samples mode-locked in the sub-500fs regime reveal the fast and longtime recoveries of the gain present in real lasing conditions. Spectrally-resolved probing gives further information about the properties of carriers in VECSEL gain media. Our results indicate that stable mode-locked operation is sustained by multiple carrier relaxation mechanisms ranging from a few femtoseconds to the pico- and nanosecond regimes.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9734
DOIs	https://doi.org/10.1117/12.2213671
State	Published - Jan 1 2016
Externally published	Yes

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title = "Ultrafast characterization of semiconductor gain and absorber devices for mode-locked VECSELs",

abstract = "We present a comprehensive characterization of semiconductor gain and absorber devices utilizing novel measurement techniques. Using a 20fs probe laser, a time resolution in the few femtosecond range is achieved in traditional pump and probe measurements performed on VECSELs and SESAMs. In-situ characterizations of VECSEL samples mode-locked in the sub-500fs regime reveal the fast and longtime recoveries of the gain present in real lasing conditions. Spectrally-resolved probing gives further information about the properties of carriers in VECSEL gain media. Our results indicate that stable mode-locked operation is sustained by multiple carrier relaxation mechanisms ranging from a few femtoseconds to the pico- and nanosecond regimes.",

author = "Caleb Baker and Maik Scheller and Yang, \{Hwang Jye\} and Koch, \{Stephan W.\} and Jones, \{Ronald J.\} and Moloney, \{Jerome V.\} and \{Ruiz Perez\}, Antje and Wolfgang Stolz and Sadhvikas Addamane and Ganesh Balakrishnan",

year = "2016",

month = jan,

day = "1",

doi = "10.1117/12.2213671",

language = "English",

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volume = "9734",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

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TY - GEN

T1 - Ultrafast characterization of semiconductor gain and absorber devices for mode-locked VECSELs

AU - Baker, Caleb

AU - Scheller, Maik

AU - Yang, Hwang Jye

AU - Koch, Stephan W.

AU - Jones, Ronald J.

AU - Moloney, Jerome V.

AU - Ruiz Perez, Antje

AU - Stolz, Wolfgang

AU - Addamane, Sadhvikas

AU - Balakrishnan, Ganesh

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We present a comprehensive characterization of semiconductor gain and absorber devices utilizing novel measurement techniques. Using a 20fs probe laser, a time resolution in the few femtosecond range is achieved in traditional pump and probe measurements performed on VECSELs and SESAMs. In-situ characterizations of VECSEL samples mode-locked in the sub-500fs regime reveal the fast and longtime recoveries of the gain present in real lasing conditions. Spectrally-resolved probing gives further information about the properties of carriers in VECSEL gain media. Our results indicate that stable mode-locked operation is sustained by multiple carrier relaxation mechanisms ranging from a few femtoseconds to the pico- and nanosecond regimes.

AB - We present a comprehensive characterization of semiconductor gain and absorber devices utilizing novel measurement techniques. Using a 20fs probe laser, a time resolution in the few femtosecond range is achieved in traditional pump and probe measurements performed on VECSELs and SESAMs. In-situ characterizations of VECSEL samples mode-locked in the sub-500fs regime reveal the fast and longtime recoveries of the gain present in real lasing conditions. Spectrally-resolved probing gives further information about the properties of carriers in VECSEL gain media. Our results indicate that stable mode-locked operation is sustained by multiple carrier relaxation mechanisms ranging from a few femtoseconds to the pico- and nanosecond regimes.

UR - https://www.scopus.com/pages/publications/84981217128

U2 - 10.1117/12.2213671

DO - 10.1117/12.2213671

M3 - Conference contribution

SN - 9781628419696

VL - 9734

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Ultrafast characterization of semiconductor gain and absorber devices for mode-locked VECSELs

Abstract

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