Ultrafast dynamics of non-epitaxially grown semiconductor-doped silica film saturable absorbers

Rohit Prativadi Prasankumar; I. Hartl; J. T. Gopinath; E. P. Ippen; J. G. Fujimoto; P. Mak; M. F. Ruane

doi:10.1109/QELS.2001.961915

Ultrafast dynamics of non-epitaxially grown semiconductor-doped silica film saturable absorbers

Rohit Prativadi Prasankumar
, I. Hartl
, J. T. Gopinath
, E. P. Ippen
, J. G. Fujimoto
, P. Mak
, M. F. Ruane

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Summary form only given. Semiconductor saturable absorbers are a widely used technology for generating femtosecond pulses in solid state lasers, providing advantages such as self-starting operation and the potential for compact laser cavities. The most common semiconductor saturable absorber devices are fabricated by molecular beam epitaxy (MBE) and have been used for both saturable absorber modelocking and initiation of Kerr lens modelocking (KLM) in many solid state laser systems. However, MBE has disadvantages including high complexity and cost as well as lattice matching constraints that limit material choice. Recently, we have developed non-epitaxially grown saturable absorber devices and applied them to self-starting KLM in a Ti:Al₂O₃ laser. The devices consist of InAs nanocrystallites doped into SiO₂ films and deposited on sapphire substrates using a non-magnetron radio frequency (RF) sputtering system. The current work focuses on methods for reducing the saturation fluence in these devices.

Original language	English
Title of host publication	Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
Publisher	Unknown Publisher
Pages	103-104
Number of pages	2
ISBN (Electronic)	155752663X, 9781557526632
DOIs	https://doi.org/10.1109/QELS.2001.961915
State	Published - Jan 1 2001
Externally published	Yes
Event	2001 Conference on Lasers and Electro-Optics, CLEO 2001 - Duration: Jan 1 2001 → …

Publication series

Name	Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001

Conference

Conference	2001 Conference on Lasers and Electro-Optics, CLEO 2001
Period	01/1/01 → …

Access to Document

10.1109/QELS.2001.961915

Cite this

Prasankumar, R. P., Hartl, I., Gopinath, J. T., Ippen, E. P., Fujimoto, J. G., Mak, P., & Ruane, M. F. (2001). Ultrafast dynamics of non-epitaxially grown semiconductor-doped silica film saturable absorbers. In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001 (pp. 103-104). Article 961915 (Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001). Unknown Publisher. https://doi.org/10.1109/QELS.2001.961915

Prasankumar, Rohit Prativadi ; Hartl, I. ; Gopinath, J. T. et al. / Ultrafast dynamics of non-epitaxially grown semiconductor-doped silica film saturable absorbers. Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Unknown Publisher, 2001. pp. 103-104 (Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001).

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title = "Ultrafast dynamics of non-epitaxially grown semiconductor-doped silica film saturable absorbers",

abstract = "Summary form only given. Semiconductor saturable absorbers are a widely used technology for generating femtosecond pulses in solid state lasers, providing advantages such as self-starting operation and the potential for compact laser cavities. The most common semiconductor saturable absorber devices are fabricated by molecular beam epitaxy (MBE) and have been used for both saturable absorber modelocking and initiation of Kerr lens modelocking (KLM) in many solid state laser systems. However, MBE has disadvantages including high complexity and cost as well as lattice matching constraints that limit material choice. Recently, we have developed non-epitaxially grown saturable absorber devices and applied them to self-starting KLM in a Ti:Al2O3 laser. The devices consist of InAs nanocrystallites doped into SiO2 films and deposited on sapphire substrates using a non-magnetron radio frequency (RF) sputtering system. The current work focuses on methods for reducing the saturation fluence in these devices.",

author = "Prasankumar, \{Rohit Prativadi\} and I. Hartl and Gopinath, \{J. T.\} and Ippen, \{E. P.\} and Fujimoto, \{J. G.\} and P. Mak and Ruane, \{M. F.\}",

year = "2001",

month = jan,

day = "1",

doi = "10.1109/QELS.2001.961915",

language = "English",

series = "Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001",

publisher = "Unknown Publisher",

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Prasankumar, RP, Hartl, I, Gopinath, JT, Ippen, EP, Fujimoto, JG, Mak, P & Ruane, MF 2001, Ultrafast dynamics of non-epitaxially grown semiconductor-doped silica film saturable absorbers. in Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001., 961915, Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001, Unknown Publisher, pp. 103-104, 2001 Conference on Lasers and Electro-Optics, CLEO 2001, 01/1/01. https://doi.org/10.1109/QELS.2001.961915

Ultrafast dynamics of non-epitaxially grown semiconductor-doped silica film saturable absorbers. / Prasankumar, Rohit Prativadi; Hartl, I.; Gopinath, J. T. et al.
Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Unknown Publisher, 2001. p. 103-104 961915 (Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Ultrafast dynamics of non-epitaxially grown semiconductor-doped silica film saturable absorbers

AU - Prasankumar, Rohit Prativadi

AU - Hartl, I.

AU - Gopinath, J. T.

AU - Ippen, E. P.

AU - Fujimoto, J. G.

AU - Mak, P.

AU - Ruane, M. F.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Summary form only given. Semiconductor saturable absorbers are a widely used technology for generating femtosecond pulses in solid state lasers, providing advantages such as self-starting operation and the potential for compact laser cavities. The most common semiconductor saturable absorber devices are fabricated by molecular beam epitaxy (MBE) and have been used for both saturable absorber modelocking and initiation of Kerr lens modelocking (KLM) in many solid state laser systems. However, MBE has disadvantages including high complexity and cost as well as lattice matching constraints that limit material choice. Recently, we have developed non-epitaxially grown saturable absorber devices and applied them to self-starting KLM in a Ti:Al2O3 laser. The devices consist of InAs nanocrystallites doped into SiO2 films and deposited on sapphire substrates using a non-magnetron radio frequency (RF) sputtering system. The current work focuses on methods for reducing the saturation fluence in these devices.

AB - Summary form only given. Semiconductor saturable absorbers are a widely used technology for generating femtosecond pulses in solid state lasers, providing advantages such as self-starting operation and the potential for compact laser cavities. The most common semiconductor saturable absorber devices are fabricated by molecular beam epitaxy (MBE) and have been used for both saturable absorber modelocking and initiation of Kerr lens modelocking (KLM) in many solid state laser systems. However, MBE has disadvantages including high complexity and cost as well as lattice matching constraints that limit material choice. Recently, we have developed non-epitaxially grown saturable absorber devices and applied them to self-starting KLM in a Ti:Al2O3 laser. The devices consist of InAs nanocrystallites doped into SiO2 films and deposited on sapphire substrates using a non-magnetron radio frequency (RF) sputtering system. The current work focuses on methods for reducing the saturation fluence in these devices.

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M3 - Conference contribution

T3 - Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001

SP - 103

EP - 104

BT - Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001

PB - Unknown Publisher

T2 - 2001 Conference on Lasers and Electro-Optics, CLEO 2001

Y2 - 1 January 2001

ER -

Prasankumar RP, Hartl I, Gopinath JT, Ippen EP, Fujimoto JG, Mak P et al. Ultrafast dynamics of non-epitaxially grown semiconductor-doped silica film saturable absorbers. In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Unknown Publisher. 2001. p. 103-104. 961915. (Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001). doi: 10.1109/QELS.2001.961915

Ultrafast dynamics of non-epitaxially grown semiconductor-doped silica film saturable absorbers

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