Ultrafast scanning tunneling microscopy using a photoexcited low-temperature-grown GaAs tip

G. P. Donati; D. Some; George Rodriguez; Antoinette Jane Taylor

Ultrafast scanning tunneling microscopy using a photoexcited low-temperature-grown GaAs tip

G. P. Donati
, D. Some
, George Rodriguez
, Antoinette Jane Taylor

Los Alamos National Laboratory

Research output: Contribution to conference › Paper

Abstract

A novel scanning tunneling microscope (STM) tip is described which consists of a cleaved GaAs substrate with a 1-μm-thick epilayer of low-temperature-grown GaAs (LT-GaAs) deposited on the face. As an application, the tip is used to detect picosecond transients on a coplanar stripline. A temporal resolution of 1.2 ps in tunneling mode is demonstrated.

Original language	English
State	Published - Jan 1 1998
Event	1998 Conference on Lasers and Electro-Optics, CLEO - Duration: Jan 1 1998 → …

Conference

Conference	1998 Conference on Lasers and Electro-Optics, CLEO
Period	01/1/98 → …

Cite this

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title = "Ultrafast scanning tunneling microscopy using a photoexcited low-temperature-grown GaAs tip",

abstract = "A novel scanning tunneling microscope (STM) tip is described which consists of a cleaved GaAs substrate with a 1-μm-thick epilayer of low-temperature-grown GaAs (LT-GaAs) deposited on the face. As an application, the tip is used to detect picosecond transients on a coplanar stripline. A temporal resolution of 1.2 ps in tunneling mode is demonstrated.",

author = "Donati, \{G. P.\} and D. Some and George Rodriguez and Taylor, \{Antoinette Jane\}",

year = "1998",

month = jan,

day = "1",

language = "English",

note = "1998 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 01-01-1998",

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TY - CONF

T1 - Ultrafast scanning tunneling microscopy using a photoexcited low-temperature-grown GaAs tip

AU - Donati, G. P.

AU - Some, D.

AU - Rodriguez, George

AU - Taylor, Antoinette Jane

PY - 1998/1/1

Y1 - 1998/1/1

N2 - A novel scanning tunneling microscope (STM) tip is described which consists of a cleaved GaAs substrate with a 1-μm-thick epilayer of low-temperature-grown GaAs (LT-GaAs) deposited on the face. As an application, the tip is used to detect picosecond transients on a coplanar stripline. A temporal resolution of 1.2 ps in tunneling mode is demonstrated.

AB - A novel scanning tunneling microscope (STM) tip is described which consists of a cleaved GaAs substrate with a 1-μm-thick epilayer of low-temperature-grown GaAs (LT-GaAs) deposited on the face. As an application, the tip is used to detect picosecond transients on a coplanar stripline. A temporal resolution of 1.2 ps in tunneling mode is demonstrated.

UR - https://www.scopus.com/pages/publications/0031634523

M3 - Paper

T2 - 1998 Conference on Lasers and Electro-Optics, CLEO

Y2 - 1 January 1998

ER -

Ultrafast scanning tunneling microscopy using a photoexcited low-temperature-grown GaAs tip

Abstract

Conference

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