Abstract
We demonstrate metasurface -based designs of InGaN/GaN quantum-well structures that generate narrow, unidirectional emission lobes at arbitrary engineered angles. The metasurface structuring also leads to ∼100-fold enhancements in photoluminescence efficiencies for emission into air.
| Original language | English |
|---|---|
| Title of host publication | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2020-May |
| State | Published - May 1 2020 |
| Externally published | Yes |
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